Ferroelectric perovskite-type films with robust in-plane polarization toward efficient room-temperature chemiresistive sensing
作者机构：State Key Laboratory of Structural ChemistryFujian Institute of Research on the Structure of MatterChinese Academy of SciencesNo.155 Yangqiao West RoadFuzhou 350002China Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of ChinaNo.155 Yangqiao West RoadFuzhou 350002China University of Chinese Academy of SciencesChinese Academy of SciencesNo.19A Yuquan RoadBeijing 100039China
出 版 物：《Fundamental Research》 (自然科学基础研究（英文版）)
年 卷 期：2023年第3卷第3期
页 面：362-368页
核心收录：
学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学]
基 金：supported by National Natural Science Foundation of China(22125110,21875251,21833010 and 21921001) the National Postdoctoral Program for Innovative Talents(BX2021315) the Key Research Program of Frontier Sciences of the Chinese Academy of Sciences(ZDBS-LY-SLH024) Youth Innovation Promotion of CAS(Y201851) the National Natural Science Foundation of China(21975254,21822109) International Part-nership Program of CAS(121835KYSB201800) Youth Innovation Promotion of CAS(2018342)
主 题：Ferroelectric-based films Hybrid perovskite 2D quantum-well In-plane polarization Chemiresistive sensing
摘 要：Ferroelectric materials have become key components for versatile device applications,and their thin films are highly desirable for integrating the miniaturized *** substantial endeavors,it is still challenging to achieve effective chemiresistive sensing in the ferroelectric ***,for the first time,we have exploited ferroelectric thin films of 2D hybrid perovskite BA_(2)EA_(2)Pb_(3)I_(10)(1),to fabricate the high-performance chemiresistor gas *** spin-coated films of 1 exhibit high orientation and good crystallinity,thus preserving robust in-plane spontaneous polarization(P_(s)~2.0μC/cm^(2))and low electric ***,such ferroelectric filmbased sensors after electric poling enable the dramatic room-temperature sensing responses to NO_(2) gas,including high sensitivity(0.05 ppm^(-1)),extremely low detection limit(1 ppm)and fast responding rate(~6 s).Besides,the chemiresistive responses are remarkably enhanced by threefold(up to 320%)through electric *** is proposed that this behavior closely involves with strong in-plane ferroelectric polarization of 1 that generates a built-in electric field inhibiting the recombination of charge *** far as we know,this ferroelectric-based film chemiresisor is one of the best room-temperature sensors for NO_(2) gas among all the existing candidate *** findings highlight great potential of ferroelectrics toward effective chemiresistive performances,and also establish a bright direction to explore their future device applications.
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