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Improving Ferro- and Piezo- Electric Properties of Hydrogenized Poly(vinylidene fluoride-trifluoroethylene) Films by Annealing at Elevated Temperatures

Improving Ferro- and Piezo- Electric Properties of Hydrogenized Poly(vinylidene fluoride-trifluoroethylene) Films by Annealing at Elevated Temperatures

作     者:Jian Wang Zhong Li Yuan Yan Xiao Wang 解云川 张志成 

作者机构:Department of Applied ChemistryMOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed MatterSchool of ScienceXi'an Jiaotong UniversityXi'an 710049China College of Material Science and EngineeringXi'an University of Science and TechnologyXi'an 710054China School of Electronic and Information EngineeringXi'an Jiaotong UniversityXi'an 710049China 

出 版 物:《Chinese Journal of Polymer Science》 (高分子科学(英文版))

年 卷 期:2016年第34卷第5期

页      面:649-658页

核心收录:

学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学] 

基  金:supported by the National Natural Science Foundation of China(Nos.51103115 50903065 and 51573146) Fundamental Research Funds for the Central Universities(Nos.XJJ2013075 and cxtd2015003) International Science & Technology Cooperation Program of China(No.2013DFR50470) Natural Science Basic Research Plan in Shaanxi Province of China(Nos.2013JZ003 and 2015JZ009) National Basic Research Program of China 973(No.6132620101) 

主  题:ferroelectric annealing crystalline dielectric fluoride systematically piezoelectric annealed remnant Annealing 

摘      要:After annealing the solution cast P(VDF-TrFE) films at elevated temperatures, which were synthesized via a full hydrogenation process from P(VDF-CTFE) with a composition of VDF/TrFE = 80/20(mol%), a series of P(VDF-TrFE) films were fabricated in present work. The crystalline and ferroelectric phases of the films were carefully characterized and their dielectric, ferroelectric and piezoelectric properties were systematically investigated. The improved crystalline and ferroelectric phases in the films induced by annealing at elevated temperatures are responsible for the significant improved electric properties of the films. The optimized annealing temperature is found to be 130 ℃ and the best performance including the highest dielectric constant of 12.5 at 1 kHz, the largest maximum polarization of 11.21 μC/cm^2 and remnant polarization of 7.22 μC/cm^2, the lowest coercive electric field of 56 MV/m, and the highest piezoelectric coefficient of -25 pC/N is observed.

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