Edge assisted epitaxy of CsPbBr_(3)nanoplates on Bi_(2)O_(2)Se nanosheets for enhanced photoresponse

作     者：Haotian Jiang Xing Xu Chao Fan Beibei Dai Zhuodong Qi Sha Jiang Mengqiu Cai Qinglin Zhang 蒋浩天;徐兴;樊超;代贝贝;亓卓栋;蒋莎;蔡孟秋;张清林

作者机构：Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan UniversityChangsha 410082China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第4期

页      面：693-699页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：the National Natural Science Foundation of China(Grant No.51772088) Hunan Provincial Innovation Foundation for Postgraduate,China(Grant No.CX20200422) 

主　　题：Bi_(2)O_(2)Se heterostructures photogenerated carriers photoresponse 

摘      要：Bi_(2)O_(2)Se has been proved to be a promising candidate for electronic and optoelectronic devices due to their unique physical ***,it is still a great challenge to construct the heterostructures with direct epitaxy of hetero semiconductor materials on Bi_(2)O_(2)Se ***,a two-step chemical vapor deposition(CVD)route was used to directly grow the CsPbBr_(3)nanoplate-Bi_(2)O_(2)Se nanosheet hetero *** CsPbBr_(3)nanoplates were selectively grown on the Bi_(2)O_(2)Se nanosheet along the edges,where the dangling bonds provide the nucleation *** epitaxial relationships between CsPbBr3 and Bi_(2)O_(2)Se were determined as[200]_(Bi_(2)O_(2)Se)‖[110]_(CsPbBr_(3))and[110]_(Bi_(2)O_(2)Se)‖[200]_(CsPbBr_(3))by transmission electron microscopy *** photoluminescence(PL)results reveal that the formation of heterostructures results in the remarkable PL quenching due to the type-Ⅰband arrangement at CsPbBr_(3)/Bi_(2)O_(2)Se interface,which was confirmed by ultraviolet photoelectron spectroscopy(UPS)and Kelvin probe measurements,and makes the photogenerated carriers transfer from CsPbBr_(3)to Bi_(2)O_(2)***,the photodetectors based on the heterostructures exhibit a 4-time increase in the responsivity compared to those based on the pristine Bi_(2)O_(2)Se sheets,and the fast rise and decay time in *** results indicate that the direct epitaxy of the CsPbBr_(3)plates on the Bi_(2)O_(2)Se sheet may improve the optoelectronic performance of Bi_(2)O_(2)Se based devices.