咨询与建议

看过本文的还看了

相关文献

该作者的其他文献

文献详情 >Extrinsic equivalent circuit m... 收藏

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

Extrinsic equivalent circuit modeling of InP HEMTs based on full-wave electromagnetic simulation

作     者:Shi-Yu Feng Yong-Bo Su Peng Ding Jing-Tao Zhou Song-Ang Peng Wu-Chang Ding Zhi Jin 冯识谕;苏永波;丁芃;周静涛;彭松昂;丁武昌;金智

作者机构:University of Chinese Academic of SciencesBeijing 100029China High-Frequency High-Voltage Device and Integrated Circuits CenterInstitute of MicroelectronicsChinese Academy of SciencesBeijing 100029China 

出 版 物:《Chinese Physics B》 (中国物理B(英文版))

年 卷 期:2022年第31卷第4期

页      面:638-646页

核心收录:

学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0704[理学-天文学] 

基  金:Project supported by the National Natural Science Foundation of China(Grant Nos.61434006 and 61704189) the Fund from the Youth Innovation Promotion Association of the Chinese Academy of Sciences 

主  题:extrinsic equivalent circuit modeling InP HEMT HFSS and ADS co-simulation S-parameters 

摘      要:With the widespread utilization of indium-phosphide-based high-electron-mobility transistors(InP HEMTs)in the millimeter-wave(mmW)band,the distributed and high-frequency parasitic coupling behavior of the device is particularly *** present an InP HEMT extrinsic parasitic equivalent circuit,in which the conductance between the device electrodes and a new gate-drain mutual inductance term L_(mgd)are taken into account for the high-frequency magnetic field coupling between device *** on the suggested parasitic equivalent circuit,through HFSS and advanced design system(ADS)co-simulation,the equivalent circuit parameters are directly extracted in the multi-step *** HFSS simulation prediction,measurement data,and modeled frequency response are compared with each other to verify the feasibility of the extraction method and the accuracy of the equivalent *** proposed model demonstrates the distributed and radio-frequency behavior of the device and solves the problem that the equivalent circuit parameters of the conventional InP HEMTs device are limited by the device model and inaccurate at high frequencies when being extracted.

读者评论 与其他读者分享你的观点

用户名:未登录
我的评分