IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics

作     者：Ying ZHU Yongli HE Chunsheng CHEN Li ZHU Changjin WAN Qing WAN Ying ZHU;Yongli HE;Chunsheng CHEN;Li ZHU;Changjin WAN;Qing WAN

作者机构：School of Electronic & Science Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing University 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2022年第65卷第6期

页      面：218-225页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by National Key R&D Program of China (Grant No. 2019YFB2205400) 

主　　题：neuromorphic transistors IGZO TFTs temperature-dependent synaptic plasticity logic transformation 

摘      要：Temperature is one of the vital influential factors for all physiological and mental *** the influence of temperature on the properties of synaptic devices is of great importance for neuromorphic computing and bionic perception. Here, indium-gallium-zinc-oxide(IGZO) based electrical-doublelayer neuromorphic transistors were proposed for the emulation of temperature-dependent synaptic *** influence of temperature on the synaptic plasticity, including excitatory postsynaptic current, pairedpulse facilitation, and dynamic filtering was investigated. Interestingly, temperature induced spiking AND to OR logic switching was demonstrated in an IGZO-based neuromorphic transistor with two in-plane gate electrodes. Our results provided an insight into the temperature-induced synaptic functions and spiking logic switching, which is interesting for neuromorphic systems with biological fidelity.