Diode-pumped Nd:YAG/LBO CW yellow laser at 588.9 nm
Diode-pumped Nd:YAG/LBO CW yellow laser at 588.9 nm作者机构:Changchun Institute of Optical and Fine Mechanics Chinese Acodemy of Science Changchun 130022 China
出 版 物:《Optoelectronics Letters》 (光电子快报(英文版))
年 卷 期:2005年第1卷第1期
页 面:30-32页
学科分类:080903[工学-微电子学与固体电子学] 080901[工学-物理电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080401[工学-精密仪器及机械] 080501[工学-材料物理与化学] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0803[工学-光学工程]
基 金:SupportedbyHi Tech863projectofPeople’sRepublicofChina (No.2002AA311141)
摘 要:A design of diode-pumped *** laser with a single crystal that generates simultaneous laser action at the wavelengths of 1064 nm and 1319 nm was presented and continuous-wave (CW) of 588.9 nm was obtained for the first time by use of type-I critical phase-matching LBO crystal intracavity sumfrequency mixing. The maximum output power of 62 mW is achieved with an incident pump power of 1.8 W. The optical-to-optical conversion efficiency is up to 3.4% ,and the power instability in 24 h is better than ± 2.7 %.