Anti-Interference Low-Power Double-Edge Triggered Flip-Flop Based on C-Elements

作     者：Zhengfeng Huang Xiao Yang Tai Song Haochen Qi Yiming Ouyang Tianming Ni Qi Xu Zhengfeng Huang;Xiao Yang;Tai Song;Haochen Qi;Yiming Ouyang;Tianming Ni;Qi Xu

作者机构：School of Electronic Science and Applied PhysicsHefei University of TechnologyHefei 230601China School of Computer and InformationHefei University of TechnologyHefei 230601China School of Electrical EngineeringAnhui Polytechnic UniversityWuhu 241000China 

出 版 物：《Tsinghua Science and Technology》 (清华大学学报（自然科学版（英文版）)

年 卷 期：2022年第27卷第1期

页      面：1-12页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 080902[工学-电路与系统] 08[工学] 

基　　金：supported in part by the National Natural Science Foundation of China(Nos.61874156 61874157 61904001 and 61904047)。 

主　　题：Double-Edge Triggered Flip-Flop(DETFF) glitch low-power C-element 

摘      要：When the input signal has been interfered and glitches occur,the power consumption of Double-Edge Triggered Flip-Flops(DETFFs)will significantly increase.To effectively reduce the power consumption,this paper presents an anti-interference low-power DETFF based on C-elements.The improved C-element is used in this DETFF,which effectively blocks the glitches in the input signal,prevents redundant transitions inside the DETFF,and reduces the charge and discharge frequencies of the transistor.The C-element has also added pull-up and pull-down paths,reducing its latency.Compared with other existing DETFFs,the DETFF proposed in this paper only flips once on the clock edge,which greatly reduces the redundant transitions caused by glitches and effectively reduces power consumption.This paper uses HSPICE to simulate the proposed DETFF and other 10 DETFFs.The findings show that compared with the other 10 types of DETFFs,the proposed DETFF has achieved large performance indexes in the total power consumption,total power consumption with glitches,delays,and power delay product.A detailed analysis of variance indicates that the proposed DETFF features less sensitivity to process,voltage,temperature,and Negative Bias Temperature Instability(NBTI)-induced aging variations.