Analysis of the generation mechanism of the S-shaped J–V curves of MoS_(2)/Si-based solar cells

作     者：He-Ju Xu Li-Tao Xin Dong-Qiang Chen Ri-Dong Cong Wei Yu 许贺菊;辛利桃;陈东强;丛日东;于威

作者机构：College of ScienceNorth China University of Science and TechnologyTangshan 063009China College of Physics Science and TechnologyHebei UniversityBaoding 071002China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第3期

页      面：608-612页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Project supported by the Science and Technology Research Project of Hebei Province Colleges and Universities (Grant No. QN2020113) Tangshan Applied Basic Research Project (Grant No. 19130227g) 

主　　题：MoS_(2)/Si-based solar cell S-shaped J–V curve power conversion efficiency p^(+)layer 

摘      要：Amorphous–microcrystalline MoS_(2)thin films are fabricated using the sol-gel method to produce MoS_(2)/Si-based solar cells. The generation mechanisms of the S-shaped current density–voltage(J–V) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped J–V curve, a MoS_(2)film and a p^(+) layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p–n junction between the p-Si and the MoS_(2)film as well as ohmic contacts between the MoS_(2)film and the ITO, improving the S-shaped J–V curve. As a result of the high doping characteristics and the high work function of the p^(+) layer, a high–low junction is formed between the p;and p layers along with ohmic contacts between the p;layer and the Ag electrode. Consequently,the S-shaped J–V curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p–n junction rectification characteristics and achieves a high power-conversion efficiency(CE) of 7.55%. The findings of this study may improve the application of MoS_(2)thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.