Magnetoresistance retraction behaviour of Ag/p-Ge:Ga/Ag device under pulsed high magnetic field

作     者：Xiong He Zhengcai Xia Haoyu Niu Zhuo Zeng Xiong He;Zhengcai Xia;Haoyu Niu;Zhuo Zeng

作者机构：Wuhan National High Magnetic Field CenterHuazhong University of Science and TechnologyWuhan 430074China School of PhysicsHuazhong University of Science and TechnologyWuhan 430074China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2022年第114卷第19期

页      面：1-6页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported in part by the National Natural Science Foundation of China (Nos. 11674115 and 51861135104) National Key R&D Program of China (No. 2016YFA0401003) 

主　　题：Germanium-based device Magnetoresistance Bipolar transport Retraction behavior Pulsed high magnetic field 

摘      要：In non-magnetic semiconductor materials,unsaturated magnetoresistance(MR)effect has attracted lots of attention due to its physical interests and potential applications in electronic *** the ex-tremely high magnetic field,the stability and reliability of MR effects based on the non-ohmic transport has been rarely *** this paper,the transport properties of non-magnetic Ag/p-Ge:Ga/Ag devices under 45 T pulsed high magnetic field at 300 K are *** is found that in ohmic conduction re-gion(I5 mA)where the single dominant carrier is hole,the MR values increase with increasing the applied magnetic field,presenting a conventional unsaturated *** the two non-ohmic regions(5 mA≤I≤100 mA)where the transport is dominated by bipolar(electrons and holes),a MR retraction has been obviously observed under pulsed high magnetic *** the Hall measurement results and calculation of Hall effect with bipolar-driven transport model,the mechanism of the MR retraction is analysed,in which the MR retraction may be related to the strong regulation of electron-to-hole den-sity ratio by pulsed high magnetic *** work provides a reference for evaluating the stability and reliability of the properties of non-magnetic semiconductor based MR devices under the interference of strong magnetic pulses.