New selection rule of resonant Raman scattering in MoS_(2) monolayer under circular polarization

作     者：Jianqi Huang Zhiyong Liu Teng Yang Zhidong Zhang Jianqi Huang;Zhiyong Liu;Teng Yang;Zhidong Zhang

作者机构：Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Materials Science and EngineeringUniversity of Science and Technology of ChinaShenyang 110016China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2022年第102卷第7期

页      面：132-136页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：financially supported by the National Natural Science Foundation of China(Nos.52031014 and 51702146) the National Key R&D Program of China(No.2017YFA0206301) 

主　　题：First principles calculation Resonant Raman Helicity selection rule MoS2 monolayer 

摘      要：The first-order resonant Raman spectra of monolayer MoS_(2)are calculated under the circularly polarized *** anomalously nonzero Raman intensity of the in-plane E mode under the Z(σ+σ+)Zor Z(σ−σ−)Zgeometry,which goes against the conventional selection rule,appears under some circum-stances when optical absorption occurs at some special reciprocal points between the zone-center Γ and the zone-edge-center M *** that moment,the valley selectivity to the circular polarization is *** analysis shows that the anomalous Raman intensity of the E mode for the same circularly polarized incident and scattered light is consistent with the pseudo-angular-momentum conservation *** cal-culated E Raman tensor of monolayer MoS_(2)is found to vary with laser *** two diagonal terms of the Raman tensor change their signs from mutually opposite to the same when the relative intensity of the in-plane E mode to the out-of-plane A _(1)mode increases,indicating the increasingly important role played by the Frölich-type electron-phonon interaction over the deformation *** study may shed new light on the understanding of the novel electron-photon process and assist in the design of new type of optoelectronic devices.