A silicon-graphene-silicon transistor with an improved current gain

作     者：Chi Liu Xu-Qi Yang Wei Ma Xin-Zhe Wang Hai-Yan Jiang Wen-Cai Ren Dong-Ming Sun Chi Liu;Xu-Qi Yang;Wei Ma;Xin-Zhe Wang;Hai-Yan Jiang;Wen-Cai Ren;Dong-Ming Sun

作者机构：Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of Sciences72 Wenhua RoadShenyang 110016China School of Material Science and EngineeringUniversity of Science and Technology of China72 Wenhua RoadShenyang 110016China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2022年第104卷第9期

页      面：127-130页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by National Natural Science Foundation of China(Nos.62074150,61704175) Chinese Academy of Sciences(SYNL Young Talent Project 2020,SKLA-2019-03,Project Young Merit Scholars) 

主　　题：Semiconductor metal semiconductor transistor Graphene base transistor Graphene base heterojunction transistor 

摘      要：In history,semiconductor-metal-semiconductor transistor(SMST)was proposed for frequency ***,a general fabrication method is still missing due to the unsolved technological problem of deposition of a general crystalline semiconductor on metal,and a thinner metal base is also difficult to be fabricated with high ***,due to the atomic thickness of graphene,the concept of semiconductor-graphene-semiconductor transistor(SGST)has emerged which leads to the renaissance of SMST,however the experimental study is in its *** this letter,SMST and SGST are fabricated using Si membrane *** is found the common base current gain can be improved from about 0.5%in a Si-Au-Si transistor to about 1%in a Si-Gr-Ge one,and to above 10%in a Si-Gr-Si one,which is attributed to both the ultra-thin thickness and the quantum capacitance effect of graphene.