Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

作     者：吕元杰 冯志红 顾国栋 尹甲运 房玉龙 王元刚 谭鑫 周幸叶 林兆军 冀子武 蔡树军 

作者机构：National Key Laboratory of Application Specific Integrated Circuit (ASIC) Hebei Semiconductor Research Institute School of Physics Shandong University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第8期

页      面：534-538页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61306113 and11174182) 

主　　题：AlGaN/AlN/GaN barrier layer thickness electron mobility polarization Coulomb field scattering 

摘      要：In this study rectangular AlGaN/AlN/GaN heterostructure field-effect transistors(HFETs) with 22-nm and 12-nm AlGaN barrier layers are fabricated, respectively. Using the measured capacitance–voltage and current–voltage characteristics of the prepared devices with different Schottky areas, it is found that after processing the device, the polarization Coulomb field(PCF) scattering is induced and has an important influence on the two-dimensional electron gas electron ***, the influence of PCF scattering on the electron mobility is enhanced by reducing the AlGaN barrier *** leads to the quite different variation of the electron mobility with gate bias when compared with the AlGaN barrier thickness. This mainly happens because the thinner AlGaN barrier layer suffers from a much stronger electrical field when applying a gate bias, which gives rise to a stronger converse piezoelectric effect.