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Temperature Dependent Resistivity of Chiral Single-Walled Carbon Nanotubes in the Presence of Coherent Light Source

Temperature Dependent Resistivity of Chiral Single-Walled Carbon Nanotubes in the Presence of Coherent Light Source

作     者:Anthony Twum Raymond Edziah Samuel Yeboah Mensah Kwadwo Dompreh Patrick Mensah-Amoah Augustine Arthur Natalia G. Mensah Kofi Adu George Nkrumah-Buandoh Anthony Twum;Raymond Edziah;Samuel Yeboah Mensah;Kwadwo Dompreh;Patrick Mensah-Amoah;Augustine Arthur;Natalia G. Mensah;Kofi Adu;George Nkrumah-Buandoh

作者机构:Department of Physics University of Cape Coast Cape Coast Ghana Department of Mathematics University of Cape Coast Cape Coast Ghana Department of Physics The Pennsylvania State University-Altoona College Altoona USA Department of Physics University of Ghana Accra Ghana 

出 版 物:《World Journal of Condensed Matter Physics》 (凝固态物理国际期刊(英文))

年 卷 期:2021年第11卷第4期

页      面:77-86页

学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

主  题:Chiral Single-Wall Carbon Nanotubes Boltzmann Transport Equation Axial Resistivity Chiral Angle 

摘      要:We have studied the axial resistivity of chiral single-walled carbon nanotubes (SWCNTs) in the presence of a combined direct current and high frequency alternating fields. We employed semiclassical Boltzmann equations approach and compared our results with a similar study that examined the circumferential resistivity of these unique materials. Our work shows that these materials display similar resistivity for both axial and circumferential directions and this largely depends on temperature, intensities of the applied fields and material parameters such as chiral angle. Based on these low-temperature bidirectional conductivity responses, we propose chiral SWCNTs for design of efficient optoelectronic devices.

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