Any-polar resistive switching behavior in Ti-intercalated Pt/Ti/HfO_(2)/Ti/Pt device

作     者：Jin-Long Jiao Qiu-Hong Gan Shi Cheng Ye Liao Shao-Ying Ke Wei Huang Jian-Yuan Wang Cheng Li Song-Yan Chen 焦金龙;甘秋宏;程实;廖晔;柯少颖;黄巍;汪建元;李成;陈松岩

作者机构：Department of Physics and Jiujiang Research InstituteXiamen UniversityXiamen 361005China College of Physics and Information EngineeringMinnan Normal UniversityZhangzhou 363000China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第11期

页      面：656-660页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.62004087,61474081,and 61534005) the Natural Science Foundation of Fujian Province,China(Grant No.2020J01815) the Natural Science Foundation of Zhangzhou,China(Grant No.ZZ2020J32) the Natural Science Foundation of Jiangxi Province,China(Grant No.20192ACBL20048) 

主　　题：filament memory resistive switching 

摘      要：The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and the bipolar resistive switching mode under the same compliance *** the present work,the any-polar resistive switching mode is demonstrated when thin Ti intercalations are introduced into both sides of Pt/HfO_(2)/Pt RRAM *** role of the Ti intercalations contributes to the fulfillment of the any-polar resistive switching working mechanism,which lies in the filament constructed by the oxygen vacancies and the effective storage of the oxygen ion at both sides of the electrode interface.