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文献详情 >Intrinsically scale-free ferro... 收藏

Intrinsically scale-free ferroelectricity in two-dimensional M_(2)X_(2)Y_(6)

作     者:Xin Jin Lei Tao Yu-Yang Zhang Jinbo Pan Shixuan Du Xin Jin;Lei Tao;Yu-Yang Zhang;Jinbo Pan;Shixuan Du

作者机构:Institute of Physics&University of Chinese Academy of SciencesChinese Academy of SciencesBeijing 100190China Songshan Lake Materials LaboratoryDongguan 523808China CAS Key Laboratory of Vacuum PhysicsBeijing 100049China 

出 版 物:《Nano Research》 (纳米研究(英文版))

年 卷 期:2022年第15卷第4期

页      面:3704-3710页

核心收录:

学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 

基  金:This work was supported by grants from the National Natural Science Foundation of China(No.61888102) the National Key Research and Development Program of China(No.2016YFA0202300) the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB30000000) Computational resources were provided by the National Supercomputing Center in Guangzhou 

主  题:two-dimensional(2D)materials mechanism of ferroelectricity scale-free ferroelectricity 

摘      要:Discovery of novel two-dimensional(2D)ferroelectric materials and understanding the mechanism are of vital importance for the design of nanoscale ferroelectric ***,we report the distinct geometric evolution mechanism of the newly reported M_(2)Ge_(2)Y_(6)monolayers and find out a large group of 2D ferroelectric candidates based on this *** origination of the ferroelectricity of M_(2)Ge_(2)Y_(6)is the vertical displacement of Ge-dimer in the same direction driven by a soft phonon mode of the centrosymmetric ***,we find another centrosymmetric configuration which is dynamically stable but higher in energy comparing with the ferroelectric *** metastable centrosymmetric phase of M_(2)Ge_(2)Y_(6)monolayers allows a new two-step ferroelectric switching path and may induce novel domain ***,the ferroelectric M_(2)Ge_(2)Y_(6)monolayers exhibit independently switchable dipoles and maintain their ferroelectricity after contacting with graphene electrodes,indicating their high application potentials in high-density ***,16 ferroelectric(FE)M_(2)Ge_(2)Y_(6)and 65 potential FE M2Sn2Y6 monolayers are identified through high-throughput *** findings provide a new strategy for future discovery of novel 2D ferroelectric materials and also platforms for experimental design of related functional devices.

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