Current Density-Dependent Thermal Stability of ZnSe Nanowire in M-S-M NanostructureD

作     者：谭玉 王岩国 

作者机构：Science College Hunan Agricultural University Changsha 410128 Beijing National Laboratory of Condensed Matter Physics Institute of Physics 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2014年第31卷第12期

页      面：134-137页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 08[工学] 070205[理学-凝聚态物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Supported by the National Natural Science Foundation of China under Grant No 11274365  and the Natural Science Foundation of Hunan Province of China under Grant No 14JJ4038 

主　　题：Thermal stability Electron microscopy 

摘      要：Due to semiconductor nanowire （NW） having a very tiny diameter, the electronic devices based on metal-semiconductor NW-metal （M-S-M） nanostruc- ture can carry a very large current density com- pared to electronics based on bulk semiconductors. A small mass of a NW also means a small heat capacitance. In this case, any small energy trans- fer from the current-carry electrons to local ionic or/and lattice vibrations in NWs may cause a sub- stantial self-heating of the NWs. Thus thermal insta- bility of NWs in M-S-M nanostructure due to Joule heating has become a fundamentally and technolog- ically important issue concerning the performance of semiconductor NW-based nanoelectronics and has at- tracted a lot of attention. The failure behaviors of various semiconductor and metallic NWs inves- tigated by in situ transmission electron microscopy （TEM） and confocal micro-Raman spectroscopy re- spectively have confirmed semiconductor NWs includ- ing Si, Ge, GaN, ZnO, Sn02, Ti02, ZnSe and ZnTe NWs electrically broken by thermal evaporation due to Joule heating and metallic NWs electrically de- stroyed by electromigration. Electron-phonon in- teraction that transfers energy from conduction elec- trons to the ions in the material causes Joule heating. Electromigration due to the transfer of the momentum of conduction electrons to the ions causes migration of atoms in the material when high current density flows through a circuit. The different failure mechanisms of these NWs are significantly materials-dependent due to the difference of their chemical and physical prop- erties and have a very close relation with the param- eters governing the electron transport mechanism at the metal-semiconductor （M-S） nanocontact such as Schottky barrier and bias polarity .