Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites
作者机构:School of Chemistry and Chemical-EngineeringNorthwestern Polytechnical UniversityXi’an710129 ShaanxiChina Dongguan Sanhang Civil-Military Integration Innovation InstituteDongguan52300 GuangdongChina Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesShaanxi Engineering Lab for Advanced Energy TechnologyInstitute for Advanced Energy MaterialsSchool of Materials Science and EngineeringShaanxi Normal UniversityXi’an 710119China School of AeronauticsNorthwestern Polytechnical UniversityXi’an710072 ShaanxiChina Department of Materials and InterfacesWeizmann Institute of ScienceRehovot 76100Israel Key Lab of Micro/Nano Systems for AerospaceMinistry of EducationNorthwestern Polytechnical UniversityXi’an710129 ShaanxiChina University of QueenslandAustralian Institute for Bioengineering&NanotechnologyNanomaterials CentreSt.LuciaQldAustralia School of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an710129 ShaanxiChina Institute of Flexible ElectronicsNorthwestern Polytechnical UniversityXi’an710129 ShaanxiChina
出 版 物:《Research》 (研究(英文))
年 卷 期:2021年第2021卷第1期
页 面:986-993页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:supported by theShaanxi Fundamental Education Research Funds for the Universities(2017e065201102) the Special Fund for Support by 2019 Guangdong Special Funds(2019B090904007)
主 题:neutral conductivity lifetime
摘 要:We report a novel Mn-Co-Ni-O(MCN)nanocomposite in which the p-type semiconductivity of Mn-Co-Ni-O can be manipulated by addition of *** an increase of graphene content,the semiconductivity of the nanocomposite can be tuned from p-type through electrically neutral to *** very low effective mass of electrons in graphene facilitates electron tunneling into the MCN,neutralizing holes in the MCN *** analysis shows that the multivalent manganese ions in the MCN nanoparticles are chemically reduced by the graphene electrons to lower-valent *** traditional semiconductor devices,electrons are excited from the filled graphite band into the empty band at the Dirac points from where they move freely in the graphene and tunnel into the *** new composite film demonstrates inherent flexibility,high mobility,short carrier lifetime,and high carrier *** work is useful not only in manufacturing flexible transistors,FETs,and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors.