Reduced threshold current density of GaN-based green laser diode by applying polarization doping p-cladding layer

作     者：江灵荣 刘建平 胡磊 张立群 田爱琴 熊巍 任霄钰 黄思溢 周伟 池田昌夫 杨辉 Lingrong Jiang;Jianping Liu;Lei Hu;Liqun Zhang;Aiqin Tian;Wei Xiong;Xiaoyu Ren;Siyi Huang;Wei Zhou;Masao Ikeda;Hui Yang

作者机构：Suzhou Institute of Nano-tech and Nano-bionicsChinese Academy of SciencesSuzhou 215123China School of Nano-tech and Nano-bionicsUniversity of Science and Technology of ChinaHefei 230026China Key Laboratory of Nanodevices and ApplicationsChinese Academy of SciencesSuzhou 215123China Nano Science and Technology InstituteUniversity of Science and Technology of ChinaHefei 230026China 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2021年第19卷第12期

页      面：45-50页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Nos.61834008,61574160,61804164 61704184) National Key Research and Development Program of China(Nos.2017YFE0131500 and2017YFB0405000) Natural Science Foundation of Jiangsu Province(No.BK20180254) China Postdoctoral Science Foundation(No.2018M630619) 

主　　题：polarization doping internal loss GaN laser diode 

摘      要：Absorption induced by activated magnesium(Mg)in a p-type layer contributes considerable optical internal loss in Ga Nbased laser diodes(LDs).An LD structure with a distributed polarization doping(DPD)p-cladding layer(CL)without intentional Mg doping was designed and *** influence of the anti-waveguide structure on optical confinement was studied by optical *** threshold current density,slope efficiency of LDs with DPD p-CL,and Mg-doped CL,respectively,were *** was found that LDs with DPD p-CL showed lower threshold current density but reduced slope efficiency,which were caused by decreasing internal loss and hole injection,respectively.