Ultrasensitive and stable all graphene field-effect transistor-based Hg^(2+)sensor constructed by using different covalently bonded RGO films assembled by different conjugate linking molecules

作     者：Mingyuan Sun Congcong Zhang Duo Chen Jian Wang Yanchen Ji Na Liang Haoyang Gao Shanshan Cheng Hong Liu 

作者机构：Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of ShandongInstitute for Advanced Interdisciplinary Research(iAIR)University of JinanJinanChina International School for Optoelectronic EngineeringQilu University of Technology(Shandong Academy of Science)JinanChina Department of PhysicsSchool of Physical Science and TechnologyUniversity of JinanJinanChina Department of ChemistrySchool of ScienceUniversity of TianjinTianjinChina State Key Laboratory of Crystal MaterialsShandong UniversityJinanChina 

出 版 物：《SmartMat》 (智能材料（英文）)

年 卷 期：2021年第2卷第2期

页      面：213-225页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Natural Science Foundation of China(Grant No.51902131) Natural Science Foundation of Shandong province(Grant No.ZR2019BEM006) National Key Research and Development Program of China(Grant No.2017YFB0405400) Major Innovation Projects in Shandong Province(2018YFJH0503) 

主　　题：coupling agent covalent bond field effect transistors Hg^(2+)detection ultra-stable 

摘      要：Asmolecular bridge,coupling agents can not only realize the covalent connection of composites,but also affect their properties,thus affecting the properties of devices based on ***,leveraging differences in charge conduction properties of the(3-aminopropyl)trimethoxysilane and 5,10,15,20-tetrakis(4-aminophenyl)-21H,23H-porphine caused by conjugacy structural differences,two kinds of layerby-layer assembled smart carbon materials with different electrical properties are obtained at the same reduction *** two graphene ultrathin films are then“plantedon Si/SiO2 substrates,respectively,as semiconductor layer and source/drain electrodes to fabricate an ultra-stable all-graphene field effect transistor(AG-FET).Enabled by the covalent functionalized configuration and the functionally diverse of coupling agents,the AG-FET obtained by this simple method won the high electrical characteristics,the hole,electron mobility,and the shelflife could reach 3.79 cm2/(V·s),3.78 cm2/(V·s),and 18months,*** addition,good material stability and excellent device structure endow the device exceptional stability,electrical stability,and solvent resistance,improving its application prospect in solution phase sensing/*** characteristics could be used to sense,transduce,and respond to external stimuli,especially in solution phase to monitor the important analytes,such as Hg^(2+)in a flowing sewage *** believe that such easy-to-manufacture AG-FETs with ultrahigh performance and ultrahigh stability could also show great application prospects in other significant fields.