Boosting the cell performance of the SiO_(x)@C anode material via rational design of a Si-valence gradient
作者机构：Fujian Provincial Solar Energy Conversion and Energy Storage Engineering Technology Research CenterCollege of Physics and EnergyFujian Normal UniversityFuzhouChina Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy MaterialsFuzhouChina Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and EngineeringFuzhouChina
出 版 物：《Carbon Energy》 (碳能源（英文）)
年 卷 期：2022年第4卷第2期
页 面：129-141页
核心收录：
基 金：This study was supported by a grant from the National Natural Science Foundation of China(No.61804030) the Solar Energy Conversion&Energy Storage Engineering Technology Innovation Platform(No.2018L3006) the Fujian Natural Science Foundation for Distinguished Young Scholars(Grant No.2020J06042)
主 题：lithium-ion battery SEI film growth SiO_(x)@C stress valence gradient
摘 要：Relieving the stress or strain associated with volume change is highly desirable for high-performance SiOx anodes in terms of stable solid electrolyte interphase(SEI)-film ***,a Si-valence gradient is optimized in SiOx composites to circumvent the large volume strain accompanied by lithium insertion/***_(x)@C annealed at 850℃ has a gentle Si-valence gradient along the radial direction and excellent electrochemical performances,delivering a high capacity of 506.9 mAh g^(−1) at 1.0 A g^(−1) with a high Coulombic efficiency of~99.8%over 400 *** with the theoretical prediction,the obtained results indicate that the gentle Si-valence gradient in SiO_(x)@C is useful for suppressing plastic deformation and maintaining the inner connection integrity within the SiO_(x)@C ***,a gentle Si-valence gradient is expected to form a stress gradient and affect the distribution of dangling bonds,resulting in local stress relief during the lithiation/delithiation process and enhanced Li-ion kinetic ***,the lowest interfacial stress variation ensures a stable SEI film at the interface and consequently increases cycling ***,rational design of a Si-valence gradient in SiOx can provide further insights into achieving high-performance SiOx anodes with large-scale production.
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