Micros true ture and Elec tron Conduction Mechanism of Hydrogenated Nano-crystalline Silicon Films

作     者：HE Yuliang(Y.L.HE) CHU Yining(Y.M.CHU) LIN Hongyi(H.Y.LIN) JIANG Shusheng(S.S.JIANG) 

作者机构：The Almorplous Plysics Research LnboratoryBeijing University of Acronan tics aud Astroal ticsBeijing 100083 Beijing Laboratory of Elcctronic Microscopy.Academia SinicaBeijing 100080 Department of Electronic Engineering.Beijing Institute of TeclunologyBeijing 100081 Laboratory of Solid State MicrostrncturesNanjing UniversityNanjing 210008 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：1993年第10卷第9期

页      面：539-542页

核心收录：

学科分类：07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Supported by the Nationdl Natural Sriance Fouddation of China inl pout by the Lsboratory of SSM,Nanjing University 

主　　题：structure. method. crystalline 

摘      要：The hydrogeunted nano-crystalline silicou(nc-Si:H)fims have been deposited with plasma cnl hanced chenuical vapor depositioi *** microstrncture of tluese films las bcen studied by trausnission electrol microscopy and high resolution trans-mission electron *** nc-Si:H filuus slow fiber tex ture *** fractal dimeision of this structure lus bccn cnlculated witl it Fouricr filtered *** relatiouship betwecn conductivity and temperature las also been studied and the mechnnisi of clectron conuduction is cdiscussed.