Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics

作     者：Zhen Li Katherine R.Jinkins Dingzhou Cui Mingrui Chen Zhiyuan Zhao Michael S.Arnold Chongwu Zhou Zhen Li;Katherine R.Jinkins;Dingzhou Cui;Mingrui Chen;Zhiyuan Zhao;Michael S.Arnold;Chongwu Zhou

作者机构：Ming Hsieh Department of Electrical EngineeringMork Family Department of Chemical Engineering and Materials Scienceand Department of Physics and AstronomyUniversity of Southern CaliforniaLos AngelesCalifornia 90089USA Department of Materials Science and EngineeringUniversity of Wisconsin-MadisonMadisonWisconsin 53706USA 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2022年第15卷第2期

页      面：864-871页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：support from National Science Foundation(NSF)via SNM-IS Award(No.1727523) 

主　　题：carbon nanotube field effect transistor air-stable complementary metal-oxide-semiconductor 

摘      要：Carbon nanotubes(CNTs)are ideal candidates for beyond-silicon nano-electronics because of their high mobility and low-cost ***,assembled massively aligned CNTs have emerged as an important platform for semiconductor ***,realizing sophisticated complementary nano-electronics has been challenging due to the p-type nature of carbon nanotubes in *** of n-type behavior field effect transistors(FETs)based on assembled aligned CNT arrays is needed for advanced CNT *** in this paper,we report a scalable process to make n-type behavior FETs based on assembled aligned CNT ***-stable and high-performance n-type behavior CNT FETs are achieved with high yield by combining the atomic layer deposition dielectric and metal contact *** also systematically studied the contribution of metal contacts and atomic layer deposition passivation in determining the transistor *** on these experimental results,we report the successful demonstration of complementary metal-oxide-semiconductor inverters with good performance,which paves the way for realizing the promising future of carbon nanotube nano-electronics.