A New Active Gate Driver for MOSFET to Suppress Turn-Off Spike and Oscillation
作者机构：School of Electrical EngineeringBeijing Jiaotong UniversityBeijing 100044China
出 版 物：《Chinese Journal of Electrical Engineering》 (中国电气工程学报（英文）)
年 卷 期：2018年第4卷第2期
页 面：43-49页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学]
基 金：Supported in part by the General Program of National Natural Science Foundation of China under Grant 51577010,51777012 in part by the Fundamental Research Funds for the Central Universities under Grant 2017JBM054
主 题：Active gate driver electromagnetic interference voltage spike oscillation
摘 要：MOSFETs are widely used in power electronics *** to the high di/dt and dv/dt of the MOSFET and parasitic parameters in the circuit,drain voltage spikes and oscillations will be generated during turn-off,which can affect the safety of the device and degrade the system s electromagnetic *** paper first studies the relationship between drain voltage spike and gate voltage during *** on the effect of gate voltage on drain voltage spike,a new active gate driver that optimizes gate voltage is *** proposed active gate driver detects the slope of the drain voltage and generates a positive pulse in the drain current fall phase to increase the gate voltage,thereby suppressing drain voltage spike and *** order to verify the effectiveness of the proposed active gate driver,a simulation circuit and an experimental platform are constructed and compared with the conventional gate *** and experimental results show that the new active gate driver can effectively suppress the drain voltage spike and oscillation of MOSFETs,and can effectively reduce high-frequency EMI.
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