Review of Si IGBT and SiC MOSFET Based on Hybrid Switch

作     者：Puqi Ning Tianshu Yuan Yuhui Kang Cao Han Lei Li 

作者机构：Key Laboratory of Power Electronics and Electric DriveInstitute of Electrical EngineeringChinese Academy of SciencesBeijing 100190China University of Chinese Academy of SciencesBeijing 100190China 

出 版 物：《Chinese Journal of Electrical Engineering》 (中国电气工程学报（英文）)

年 卷 期：2019年第5卷第3期

页      面：20-29页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Key Research and Development Program of China(2016YFB0100600) the Key Program of Bureau of Frontier Sciences and Education,and Chinese Academy of Sciences(QYZDBSSW-JSC044) 

主　　题：Hybrid module SiC device Si IGBT SiC MOSFET 

摘      要：SiC Hybrid switch(HyS)combines low conduction loss of Si IGBT and low switching loss of SiC MOSFET,and the cost is closer to that of Si *** promising high performances of HyS will bring considerable achievement in terms of enhancing power density of a converter *** reviewing the gate drive pattern,gate drive hardware,current sharing,module design,converter design,and cost,this paper introduces state-of-the-art SiC HyS.