A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver

作     者：王日炎 黄继伟 李正平 张伟峰 曾隆月 

作者机构：Guangzhou Runxin Information Technology Co.Ltd College of Physics and Information EngineeringFuzhou University Institute of RF-&OE ICSoutheast University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2012年第33卷第3期

页      面：76-80页

核心收录：

学科分类：0810[工学-信息与通信工程] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0804[工学-仪器科学与技术] 080402[工学-测试计量技术及仪器] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the National High-Tech R&D Program of China(No.2009AA01Z260) the Guangdong Science and Technology Program(No.2009A010100004) Guangdong & Hong Kong Cooperation Key Area 2010(No.2010498E1) 

主　　题：RF CMOS front-end passive mixer 25%duty-cycle variable gain quadrature demodulator 

摘      要：A CMOS RF front-end for the long-term evolution（LTE） direct conversion receiver is presented.With a low noise transconductance amplifier（LNA）,current commutating passive mixer and transimpedance operational amplifier（TIA）,the RF front-end structure enables high-integration,high linearity and simple frequency planning for LTE multi-band applications.Large variable gain is achieved using current-steering transconductance stages.A current commutating passive mixer with 25%duty-cycle LO improves gain,noise and linearity.A direct coupled current-input filter（DCF） is employed to suppress the out-of-band interferer.Fabricated in a 0.13-μm CMOS process,the RF front-end achieves a 45 dB conversion voltage gain,2.7 dB NF,-7 dBm IIP3,and ＋60 dBm IIP2 with calibration from 2.3 to 2.7 GHz.The total RF front end with divider draws 40 mA from a single 1.2-V supply.