Broadband photodetector of high quality SbS nanowire grown by chemical vapor deposition

作     者：Kun Ye Bochong Wang Anmin Nie Kun Zhai Fusheng Wen Congpu Mu Zhisheng Zhao Jianyong Xiang Yongjun Tian Zhongyuan Liu 

作者机构：Center for High Pressure ScienceState Key Laboratory of Metastable Materials Science TechnologyYanshan UniversityQinhuangdao 066004China Key Laboratory for Microstructural Material Physics of Hebei ProvinceSchool of ScienceYanshan UniversityQinhuangdao 066004China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2021年第16期

页      面：14-20页

核心收录：

学科分类：080901[工学-物理电子学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 080401[工学-精密仪器及机械] 080501[工学-材料物理与化学] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(51732010 51972280 51672240 51801175) 

主　　题：Sb2S3 nanowires Photodetector Chemical Vapor Deposition 

摘      要：Low dimensional semiconductors can be used for various electronic and optoelectronic devices because of their unique structure and *** this work,one-dimensional Sb2 S3 nanowires(NWs)with high crystallinity were grown via chemical vapor deposition(CVD)technique on SiO2/Si *** Sb2 S3 NWs exhibited needle-like structures with inclined *** lengths of Sb2S3 nanowires changed from 7 to 13μ*** photodetection properties of Sb2 S3 nanowires were comprehensively and systematically *** Sb2S3 photodetectors show a broadband photoresponse ranging from ultraviolet(360 nm)to near-infrared(785 nm).An excellent specific detectivity of 2.1×10^(14)Jones,high external quantum efficiency of 1.5×10^(4)%,sensitivity of 2.2×10^(4)cm^(2)W^(-1)and short response time of less than 100 ms was achieved for the Sb2 S3 NW ***,the Sb2S3 NWs showed outstanding switch cycling stability that was beneficial to the practical *** high-quality Sb2S3 nanowires fabricated by CVD have great application potential in semiconductor and optoelectronic fields.