In-plane oriented CH_(3)NH_(3)PbI_(3) nanowire suppression of the interface electron transfer to PCBM

作     者：Tao Wang Zhao-Hui Yu Hao Huang Wei-Guang Kong Wei Dang Xiao-Hui Zhao 王涛;于朝辉;黄昊;孔伟光;党伟;赵晓辉

作者机构：Hebei Key Laboratory of Optic-Electronic Information MaterialsCollege of Physics Science and TechnologyHebei UniversityBaoding 071002China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第6期

页      面：469-475页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 21503066 and 61904048) the Fundamental Research Project from Shenzhen Science and Technology Innovation Committee (Grant No. JCYJ20180302174021198) the Natural Science Foundation of Hebei Province China(Grant No. F2017201136) the Foundation of Hebei Educational Committee (Grant No. ZC2016003) 

主　　题：lead-halide perovskite nanowire interface electron transfer transient absorption spectroscopy 

摘      要：One-dimensional nanowire is an important candidate for lead-halide perovskite-based photonic detectors and solar cells. Its surface population, diameter, and growth direction, etc., are critical for device performance. In this research,we carried out a detailed study on electron transfer process at the interface of nanowire CH_(3) NH_(3) PbI_(3)(N-MAPbI_(3))/Phenyl C61 butyric acid methyl-ester synonym(PCBM), as well as the interface of compact CH_(3) NH_(3) PbI_(3)(C-MAPbI_(3))/PCBM by transient absorption spectroscopy. By comparing the carrier recombination dynamics of N-MAPbI_(3), N-MAPbI_(3)/PCBM,C-MAPbI_(3), and C-MAPbI_(3)/PCBM from picosecond(ps) to hundred nanosecond(ns) time scale, it is demonstrated that electron transfer at N-MAPbI_(3)/PCBM interface is less efficient than that at C-MAPbI_(3)/PCBM interface. In addition, electron transfer efficiency at C-MAPbI_(3)/PCBM interface was found to be excitation density-dependent, and it reduces with photo-generation carrier concentration increasing in a range from 1.0 × 1018 cm^(-3)–4.0 × 1018 cm^(-3). Hot electron transfer,which leads to acceleration of electron transfer between the interfaces, was also visualized as carrier concentration increases from 1.0 × 10^(18) cm^(-3)–2.2 × 10^(18) cm^(-3).