A Review of WBG and Si Devices Hybrid Applications

作     者：Li Zhang Zhongshu Zheng Xiutao Lou 

作者机构：College of Energy and Electrical EngineeringHohai UniversityNanjing 211100China 

出 版 物：《Chinese Journal of Electrical Engineering》 (中国电气工程学报（英文）)

年 卷 期：2021年第7卷第2期

页      面：1-20页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Supported by the National Natural Science Foundation of China(51677054) the 16th Six Talent Peaks Project in Jiangsu Province(2019-TD-XNY-001) 

主　　题：Silicon carbide(SiC)devices gallium nitride(GaN)devices silicon(Si)devices hybrid application 

摘      要：In recent years,next-generation power semiconductor devices,represented by silicon carbide(SiC)and gallium nitride(GaN),have gradually *** wide-bandgap(WBG)devices have better electrical characteristics than those of silicon(Si)based devices,they have attracted increased attention both from academic researchers and industrial *** WBG devices will further improve the efficiency and power density of power ***,the current price of WBG devices remains extremely ***,some researches have focused on the hybrid utilization of WBG devices and Si-based devices to achieve a tradeoff between the performance and *** summarize the current research on WBG/Si hybrid applications,the issues mentioned above with representative research approaches,results,and characteristics,are systematically ***,the current research on WBG/Si hybrid applications and their future trends are discussed.