Molecular conformation-induced interfacial stress at the origin of the instability of organic transistors

作     者：Antonio Facchetti Antonio Facchetti

作者机构：Department of Chemistry and Materials Research CenterNorthwestern University2145 Sheridan RoadEvanstonIL60208USA Flexterra Corporation8025 Lamon AvenueSkokieIL60077USA 

出 版 物：《Science China Chemistry》 (中国科学（化学英文版）)

年 卷 期：2021年第64卷第9期

页      面：1437-1438页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 

主　　题：transistors interfacial origin 

摘      要：As one of the most important organic electronic building block,organic field-effect transistors(OFETs)have broad application prospects in the fields of flexible displays,electronic skins,and wearable *** more than 30 years of development,the performance(e.g.,the carrier mobility)and processing technology of OFETs have made considerable progress^([1,2]).