Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

作     者：Yang Han Zhuping Fei Yen-Hung Lin Jaime Martin Floriana Tuna Thomas DAnthopoulos Martin Heeney 

作者机构：Dept.Chemistry and Centre for Plastic ElectronicsImperial College LondonExhibition RdLondon SW72AZUK Dept.Physics and Centre for Plastic ElectronicsImperial College LondonExhibition RdLondon SW72AZUK Dept.of MaterialsImperial College LondonExhibition RdLondon SW72AZUK School of Chemistry and Photon Science InstituteUniversity of ManchesterOxford RdManchester M139PLUK Division of Physical Sciences and EngineeringKing Abdullah University of Science and TechnologyThuwal 23955-6900Saudi Arabia 

出 版 物：《npj Flexible Electronics》 (npj-柔性电子（英文）)

年 卷 期：2018年第2卷第1期

页      面：90-96页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：This work was financially supported by the British Council(grant number 173601536) 

主　　题：dopant tuning doping 

摘      要：Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic *** to p-type dopants,the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric *** this article,we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2)in organic thin film transistor devices by soluble anion *** addition of the dopants resulted in the formation of stable radical anions in thin films,as confirmed by EPR *** tuning the dopant concentration via simple solution mixing,the transistor parameters could be readily *** the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced,which resulted in the transistor behaviour approaching the desirable gate voltage-independent *** hysteresis was also observed,thanks to the trap filling by the *** optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of *** doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.