Rapid thermal evaporation for cadmium selenide thin-film solar cells
Rapid thermal evaporation for cadmium selenide thin-film solar cells作者机构:Sargent Joint Research CenterWuhan National Laboratory for Optoelectronics(WNLO)School of Optical and Electronic InformationHuazhong University of Science and TechnologyWuhan 430074China China-EU Institute for Clean and Renewable Energy(ICARE)Huazhong University of Science and TechnologyWuhan 430074China State Research InstituteCenter for Physical Sciences and TechnologyVilnius 02300Lithuania
出 版 物:《Frontiers of Optoelectronics》 (光电子前沿(英文版))
年 卷 期:2021年第14卷第4期
页 面:482-490页
核心收录:
学科分类:08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程(可授工学、理学学位)]
基 金:the National NaturalScience Foundation of China (Grant Nos. 61725401, 61904058,and 62050039) the National Key R&D Program of China (No.2016YFA0204000) the Innovation Fund of WNLO, National PostdoctoralProgram for Innovative Talent (No. BX20190127) the Graduates’ InnovationFund of Huazhong University of Science and Technology (No.2020yjsCXCY003) China Postdoctoral Science Foundation Project(Nos. 2019M662623 and 2020M680101)
主 题:cadmium selenide(CdSe) rapid thermal evaporation(RTE) solar cells thin film
摘 要:Cadmium selenide(CdSe)belongs to the binary II-VI group semiconductor with a direct bandgap of~1.7 *** suitable bandgap,high stability,and low manufacturing cost make CdSe an extraordinary candidate as the top cell material in silicon-based tandem solar ***,only a few studies have focused on CdSe thin-film solar cells in the past *** the advantages of a high deposition rate(~2µm/min)and high uniformity,rapid thermal evaporation(RTE)was used to maximize the use efficiency of CdSe source material.A stable and pure hexagonal phase CdSe thin film with a large grain size was *** CdSe film demonstrated a 1.72 eV bandgap,narrow photoluminescence peak,and fast *** the optimal device structure and film thickness,we finally achieved a preliminary efficiency of 1.88%for CdSe thin-film solar cells,suggesting the applicability of CdSe thin-film solar cells.