Ion doping simultaneously increased the carrier density and modified the conduction type of Sb_(2)Se_(3) thin films towards quasi-homojunction solar cell
作者机构:Shenzhen Key Laboratory of Advanced Thin Films and ApplicationsKey Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China Univ RennesCNRSISCR(Institut des Sciences Chimiques de Rennes)UMR 6226F-35000RennesFrance Tianjin Key Laboratory of Photoelectronic Thin Film Devices and TechnologyRenewable Energy Conversion and Storage CenterNankai UniversityTianjin300350China
出 版 物:《Journal of Materiomics》 (无机材料学学报(英文))
年 卷 期:2021年第7卷第6期
页 面:1324-1334页
核心收录:
学科分类:08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程(可授工学、理学学位)]
基 金:supported by Natural Science Foundation of Guangdong Province(2020A1515010805)China National Natural Science Foundation of China(No.62074102) Key Project of Department of Education of Guangdong Province(No.2018KZDXM059)China Science and Technology plan project of Shenzhen(JCYJ20190808153409238)China
主 题:Sb_(2)Se_(3) Thin film Ion doping Carrier density Quasi-homojunction solar cell
摘 要:Antimony selenide(Sb_(2)Se_(3))has drawn tremendous research attentions in recent years as an environment-friendly and cost-efficient photovoltaic ***,the intrinsic low carrier density and electrical conductivity limited its scope of *** this work,an effective ion doping strategy was implemented to improve the electrical and photoelectrical performances of Sb_(2)Se_(3) thin *** Sn-doped and I-doped Sb_(2)Se_(3) thin films with controllable chemical composition can be prepared by magnetron sputtering combined with post-selenization treatment based on homemade plasma sintered *** a result,the Sn-doped Sb_(2)Se_(3) thin film exhibited a great increase in carrier density by several orders of magnitude,by contrast,a less increase with one order of magnitude was achieved for the Idoped Sb_(2)Se_(3) thin ***,such cation or anion doping could simultaneously modify the conduction type of Sb_(2)Se_(3),enabling the first fabrication of a substrate structured Sb_(2)Se_(3)-based quasihomojunction thin film solar cell with configuration of Mo/Sb_(2)Se_(3)-Sn/Sb_(2)Se_(3)-I/ITO/*** obtained power conversion efficiency exceeding 2%undoubtedly demonstrated its attractive photovoltaic application potential and further investigation necessity.