Recent Advances in Organic-inorganic Hybrid Photoresists

作     者：Zhihao Wang Xindi Yao Huiwen An Yake Wang Jinping Chen Shuangqing Wang Xudong Guo Tianjun Yu Yi Zeng Guoqiang Yang Yi Li 

作者机构：Key Laboratory of Photochemical Conversion and Optoelectronic MaterialsTechnical Institute of Physics and ChemistryChinese Academy of SciencesBeijing 100190China Beijing National Laboratory for Molecular Sciences(BNLMS)Key laboratory of PhotochemistryInstitute of ChemistryChinese Academy of SciencesBeijing 100190China University of Chinese Academy of SciencesBeijing 100039China 

出 版 物：《Journal of Microelectronic Manufacturing》 (微电子制造学报（英文）)

年 卷 期：2021年第4卷第1期

页      面：1-15页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Financial support from the National Natural Science Foundation of China(22090012,U20A20144,21873106,22073108 and 21903085) the Ministry of Science and Technology of China Major Project(2018ZX02102005,2011ZX02701)is gratefully acknowledged 

主　　题：Organic-inorganic hybrid photoresist EUV lithography nanocluster nanoparticle organometallic complex 

摘      要：Photoresists are radiation-sensitive materials used for forming patterns to build up IC *** date,most photoresists have been based on organic polymers,which have been dominating the semiconductor industries over the past few *** is obvious that extreme ultraviolet(EUV)lithography has become the next-generation lithography *** development of comprehensive performance EUV resist is one of the most critical ***,organic polymeric photoresists are difficult to meet the harsh requirements of EUV *** inorganic photoresists such as metal salts,hydrogen silsesquioxane(HSQ)are expected for EUV lithography due to their high resistance and high *** the low sensitivity makes them not suitable for high volume manufacturing(HVM).Organic-inorganic hybrid photoresists,containing both organic and inorganic components,are regarded as one of the most promising EUV *** combine both merits of organic and inorganic materials and have significant advantages in machinability,etching resistance,EUV absorption,and chemical/thermal ***-inorganic hybrid photoresists are considered as ideal materials for realizing industrialgrade patterns below 10 *** review mainly focuses on the development of organic-inorganic hybrid photoresists over the past decade.