Precision integration of grating-based polarizers onto focal plane arrays of near-infrared photovoltaic detectors for enhanced contrast polarimetric imaging

作     者：Bo Feng Yifang Chen Duo Sun Zongyao Yang Bo Yang Xue Li Tao Li Bo Feng;Yifang Chen;Duo Sun;Zongyao Yang;Bo Yang;Xue Li;Tao Li

作者机构：Nanolithography and Application Research GroupState Key Laboratory of ASIC and SystemSchool of Information Science and TechnologyFudan UniversityShanghai 200433People’s Republic of China State Key Laboratories of Transducer TechnologyShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083People’s Republic of China 

出 版 物：《International Journal of Extreme Manufacturing》 (极端制造（英文）)

年 卷 期：2021年第3卷第3期

页      面：95-102页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：financially supported by the following projects:Open project of SITP(Project Number:IIMDKFJJ-18-09) National Natural Science Foundation of China(Project Number:61927820) The STCSM2019-11-20 funding(Project Number:19142202700) National Natural Science Foundation of China(Project Number:NSF No.U1732104) Zhejiang Lab’s International Talent Fund for Young Professionals 

主　　题：polarimetric imaging grating based polarizer InGaAs/InP focal plane array nanofabrication 

摘      要：Polarimetric imaging enhances the ability to distinguish objects from a bright background by detecting their particular polarization status,which offers another degree of freedom in infrared remote ***,to scale up by monolithically integrating grating-based polarizers onto a focal plane array(FPA)of infrared detectors,fundamental technical obstacles must be overcome,including reductions of the extinction ratio by the misalignment between the polarizer and the detector,grating line width fluctuations,the line edge roughness,*** paper reports the authors’latest achievements in overcoming those problems by solving key technical issues regarding the integration of large-scale polarizers onto the chips of FPAs with individual indium gallium arsenide/indium phosphide(In Ga As/In P)sensors as the basic building *** and photovoltaic chips with divisions of the focal plane of 540×4 pixels and 320×256 superpixels have been successfully *** imaging with enhanced contrast has been *** progress made in this work has opened up a broad avenue toward industrialization of high quality polarimetric imaging in infrared wavelengths.