Characterization of field-effect mobility at optical frequency by microring resonators

作     者：Wei-Che Hsu Erwen Li Bokun Zhou Alan X.Wang 

作者机构：School of Electrical Engineering and Computer ScienceOregon State UniversityCorvallisOregon 97331USA 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2021年第9卷第4期

页      面：615-621页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：National Aeronautics and Space Administration(80NSSC21K0230) National Science Foundation Directorate for Engineering(1927271) Air Force Office of Scientific Research(FA9550-17-1-0071) 

主　　题：microring optical mobility 

摘      要：A novel characterization method is proposed to extract the optical frequency field-effect mobility(μ_(op,FE))of transparent conductive oxide(TCO)materials by a tunable silicon microring resonator with a heterogeneously integrated titanium-doped indium oxide(ITiO)/SiO_(2)/silicon metal–oxide–semiconductor(MOS)*** operating the microring in the accumulation mode,the quality factor and resonance wavelength shift are measured and subsequently used to derive the𝜇op,FE in the ultra-thin accumulation *** results demonstrate that the μ_(op,FE) of ITiO increases from 25.3 to 38.4 cm2⋅V^(−1)⋅s^(−1) with increasing gate voltages,which shows a similar trend as that at the electric frequency.