A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps
A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps作者机构:National Laboratory of Solid State Microstructures School of Electronic Science and Engineering Collaborative Innovation Center of Advanced MicrostructuresNanjing University
出 版 物:《Science China(Information Sciences)》 (中国科学:信息科学(英文版))
年 卷 期:2021年第64卷第4期
页 面:174-176页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学] 0812[工学-计算机科学与技术(可授工学、理学学位)]
基 金:supported by National Natural Science Foundation of China (Grant Nos. 61734003 61521001 61927808 61851401)
主 题:compact model field effect transistor (FET) transition metal dichalcogenide (TMD) MoS2 interface traps
摘 要:Dear editor,Two-dimensional transition metal dichalcogenide (TMD)materials, such as molybdenum disulphide (MoS2), are considered as promising channel candidates in field effect transistors (FETs) for future generations of complex systems owing to their ultrathin body and dangling-bond free surface [1].