Modeling,simulations,and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes

作     者：Tao Fang Ling-Qi Li Guang-Rui Xia Hong-Yu Yu 房涛;李灵琪;夏光睿;于洪宇

作者机构：School of MicroelectronicsSouthern University of Science and TechnologyShenzhen 518055China Department of Materials Engineeringthe University of British ColumbiaVancouverBritish ColumbiaV6T1Z4Canada 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第2期

页      面：457-461页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 13[艺术学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 1305[艺术学-设计学（可授艺术学、工学学位）] 080203[工学-机械设计及理论] 081304[工学-建筑技术科学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0802[工学-机械工程] 0813[工学-建筑学] 080201[工学-机械制造及其自动化] 

主　　题：technology computer-aided design(TCAD) gallium oxide(Ga2O3) gallium nitride(GaN) Schottky barrier diode(SBD) 

摘      要：With technology computer-aided design(TCAD)simulation software,we design a new structure of gallium oxide on gallium-nitride Schottky barrier diode(SBD).The parameters of gallium oxide are defined as new material parameters in the material library,and the SBD turn-on and breakdown behavior are *** simulation results reveal that this new structure has a larger turn-on current than Ga2O3 SBD and a larger breakdown voltage than Ga N ***,to solve the lattice mismatch problem in the real epitaxy,we add a Zn O layer as a transition *** simulations show that the device still has good properties after adding this layer.