Defect engineering of rutile TiO_(2) ceramics:Route to high voltage stability of colossal permittivity

作     者：Yang Yu Yu Zhao Yu-Long Qiao Yu Feng Wei-Li Li Wei-Dong Fei Yang Yu;Yu Zhao;Yu-Long Qiao;Yu Feng;Wei-Li Li;Wei-Dong Fei

作者机构：School of Electrical and Electronic EngineeringHarbin University of Science and TechnologyHarbin 150080China State Key Laboratory of Advanced Welding and JoiningHarbin Institute of TechnologyHarbin 150001China Research Center of Basic Space ScienceHarbin Institute of TechnologyHarbin 150001China National Key Laboratory of Science and Technology on Precision Heat Processing of MetalsHarbin Institute of TechnologyHarbin 150001China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2021年第84卷第25期

页      面：10-15页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：financially supported by the Fundamental Research Foundation for University of Heilongjiang Province(No.2018-KYYWF-1628) the National Natural Science Foundation of China(Nos.51471057 and 51677033) 

主　　题：Colossal permittivity Co-doped TiO_(2) Defect cluster Voltage stability 

摘      要：Donor-acceptor co-doped rutile TiO_(2) ceramics with colossal permittivity(CP)have been extensively investigated in recent years due to their potential applications in modern *** addition to CP and low dielectric loss,voltage stability is an essential property for CP materials utilized in high-power and high-energy density storage ***,the voltage stability of CP materials based on codoped TiO_(2) does not catch enough ***,we propose a strategy to enhance the voltage stability of co-doped TiO_(2),where different ionic defect clusters are formed by two acceptor ions with different radii to localize free carriers and result in high performance CP ***(Ta+Al+La)co-doped TiO_(2) ceramic with suitable La/Al ratio exhibits colossal permittivity with excellent temperature stability as well as outstanding dc bias *** density functional theory analysis suggests that La^(3+)Al^(3+)V_(0)Ti^(3+)defect clusters and Ta^(5+)-Al^(3+)pairs are responsible for the excellent dielectric properties in(Ta+Al+La)co-doped TiO_(2).The results and mechanisms presented in this work open up a feasible route to design high performance CP materials via defect engineering.