Physics of electron emission and injection in two-dimensional materials: Theory and simulation

作     者：Yee Sin Ang Liemao Cao Lay Kee Ang 

作者机构：ScienceMathematics and Technology(SMT)Singapore University of Technology and Design(SUTD)SingaporeSingapore College of Physics and Electronic EngineeringHengyang Normal UniversityHengyangChina 

出 版 物：《InfoMat》 (信息材料（英文）)

年 卷 期：2021年第3卷第5期

页      面：502-535页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Singapore Ministry of Education Tier 2 Grant Grant/Award Number:2018-T2-1-007 

主　　题：2D material interfaces charge injection contact engineering heterostructures theory and simulations 

摘      要：Electrically contacting two-dimensional(2D)materials is an inevitable process in the fabrication of devices for both the study of fundamental nanoscale charge transport physics and the design of high-performance novel electronic and optoelectronic *** physics of electrical contact formation and interfacial charge injection critically underlies the performance,energyefficiency and the functionality of 2D-material-based devices,thus representing one of the key factors in determining whether 2D materials can be successfully implemented as a new material basis for the development of nextgeneration beyond-silicon solid-state device *** this review,the recent developments in the theory and the computational simulation of electron emission,interfacial charge injection and electrical contact formation in 2D material interfaces,heterostructures,and devices are *** on thermionic charge injection phenomena which are omnipresent in 2Dmaterials-based metal/semiconductor Schottky contacts,we summarize various transport models and scaling laws recently developed for 2D *** progress on the first-principle density functional theory simulation of 2D-material-based electrical contacts are also *** review aims to provide a crystalized summary on the physics of charge injection in the 2D Flatlands for bridging the theoretical and the experimental research communities of 2D material device physics and technology.