Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature

作     者：王金晓 秦艳丽 闫恒庆 高平奇 栗军帅 尹旻 贺德衍 

作者机构：Department of Physics Lanzhou University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2009年第18卷第2期

页      面：773-777页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0704[理学-天文学] 

基　　金：supported by the National Natural Science Foundation of China (Grant No 60776009) 

主　　题：surface structure columnar growth inductively coupled plasma CVD crystalline silicon films 

摘      要：Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH4 and H2 as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as -9.8V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.