Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved test setup

作     者：Shen Diao Jun Sun Ziwei Zhou Zhenzhong Zhang Adolf Schöner Zedong Zheng Weiwei He Shen Diao;Jun Sun;Ziwei Zhou;Zhenzhong Zhang;Adolf Schöner;Zedong Zheng;Weiwei He

作者机构：Research and Development DepartmentShenzhen BASiC Semiconductor Ltd.Shenzhen 518000China Dept.Electrical EngineeringTsinghua UniversityBeijing 100084China 

出 版 物：《Nanotechnology and Precision Engineering》 (纳米技术与精密工程（英文）)

年 卷 期：2020年第3卷第4期

页      面：235-240页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：This work was supported by the Shenzhen Science and Technology Program[Grant No.KQTD2017033016491218] 

主　　题：SiC MOSFET Short-circuit test Failure analysis 

摘      要：Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)is very important for their practical *** paper studies the SiC MOSFET short-circuit characteristics with an improved test setup under different conditions.A high-current Si insulated gate bipolar transistor is used as a circuit breaker in the test circuit rather than the usual short-circuit test conducted without a circuit *** test platform with a circuit breaker does not influence the calculation results regarding the shortcircuitwithstand time and energy,but the SiCMOSFETwill switch off after failure in a very short *** addition,the degree of failure will be limited and confined to a small area,such that the damage to the chip will be clearly observable,which is significant for short-circuit failure analysis.