Foreword to the special issue on wide-bandgap(WBG)semiconductors:from fundamentals to applications

作     者：Zongwei Xu Yidan Tang Mathias Rommel Zongwei Xu;Yidan Tang;Mathias Rommel

作者机构：Tianjin UniversityChina Institute of Microelectronics of Chinese Academy of SciencesChina Fraunhofer Institute for Integrated Systems and Device Technology(IISB)Germany 

出 版 物：《Nanotechnology and Precision Engineering》 (纳米技术与精密工程（英文）)

年 卷 期：2020年第3卷第4期

页      面：187-188页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：carbide attractive extreme 

摘      要：The development of new kinds of semiconductor material is a very attractive topic of scientific research and *** is considered as one of the most impressive 2D materials for many applications,like graphene-reinforced metal matrix nanocomposites.1 Widebandgap(WBG)semiconductors have received widespread attention in recent years because of their superior physical properties such as large band gap,high carrier mobility,and high thermal *** by silicon carbide(SiC)and gallium nitride(GaN),WBG semiconductor materials,therefore,can be operated in extreme working environments or conditions such as high temperature,high frequency,and high power.