A MOVPE method for improving InGaN growth quality by pre-introducing TMIn

作     者：Zi-Kun Cao De-Gang Zhao Jing Yang Jian-Jun Zhu Feng Liang Zong-Shun Liu 曹子坤;赵德刚;杨静;朱建军;梁锋;刘宗顺

作者机构：State Key Laboratory of Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第1期

页      面：551-554页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0400803 and 2016YFB0401801) the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,and 61574134) 

主　　题：InGaN metal organic vapor phase epitaxy(MOVPE) 

摘      要：We propose a metal organic vapor phase epitaxy(MOVPE) method of pre-introducing TMIn during the growth of uGa N to improve the subsequent growth of In Ga N and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive In Ga N growth rate. Further x-ray diffraction(XRD), photoluminescence(PL), and atomic force microscope(AFM) tests showed that the quality of In Ga N is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when In Ga N is grown, so as to improve the material quality.