Interface engineering of p-n heterojunction for kesterite photovoltaics:A progress review
Interface engineering of p-n heterojunction for kesterite photovoltaics: A progress review作者机构:School of Photovoltaic and Renewable Energy EngineeringUniversity of New South WalesSydneyNSW 2052Australia
出 版 物:《Journal of Energy Chemistry》 (能源化学(英文版))
年 卷 期:2021年第30卷第9期
页 面:1-8页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 080502[工学-材料学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:supported by the Australian Renewable Energy Agency(ARENA,1-USO028,2017/RND006) the Australian Research Council(ARC)Future Fellowship programme(FT190100756) the ACAP postdoctoral fellowship supported by Australian Centre for Advanced Photovoltaics(Grant No.1-SRI001) the ACAP postdoctoral fellowship supported by Australian Centre for Advanced Photovoltaics(ACAP,RG200768-A)
主 题:Kesterite Thin film Solar cell Heterojunction Interface
摘 要:Kesterite Cu_(2)ZnSn(S,Se)_4(CZTSSe)is considered one or the most promising thin-film photovoltaic(PV)technologies due to its bandgap tunability(1.0~1.5 eV)and high absorption coefficient(10^(4)cm^(-1)).However,the highest power conversion efficiency(PCE)of CZTSSe has so far only reached up to 12.6%,much lower than the theoretical limit defined by the Shockley-Queisser(SQ)*** large opencircuit voltage(V_(oc))deficit and inferior fill factor(FF)are prevalent in kesterite PV and hamper the improvement in *** this review,unfavourable energy band alignment at the CZTSSe/buffer junction,as well as defective interface are identified as two obstacles at the p-n *** issues contribute to the interface induced recombination,thus significantly reducing ***,we review recent advances in strategies to improve the efficiency by altering the characteristics of the interface,covering alternative buffer layers,heterojunction treatments and passivation ***,future research directions of heterojunction engineering are proposed as schemes towards the ideal interface in kesterite solar cells.