Effect of processing parameters on in situ screen printing-assisted synthesis and electrical properties of Ti3SiC2-based structures

作     者：Mylena LORENZ Nahum TRAVITZKY Carlos R.RAMBO Mylena LORENZ;Nahum TRAVITZKY;Carlos R.RAMBO

作者机构：Department of Materials ScienceUniversity of Erlangen-Nuremberg91058 ErlangenGermany Tomsk Polytechnic University634050 TomskRussia Departm ent of Electrical and Electronic EngineeringFederal University of Santa Catarina88040-900 FlorianopolisBrazil 

出 版 物：《Journal of Advanced Ceramics》 (先进陶瓷（英文）)

年 卷 期：2021年第10卷第1期

页      面：129-138页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0822[工学-轻工技术与工程] 

基　　金：The authors thank the Central Laboratory of Electronic Microscopy(LCME-UFSC)and the multiuser facility LDRX at UFSC.This study was financed in part by the Coordena^ao de Aperfei^oamento de Pessoal de Nivel Superior-Brazil(CAPES)-Finance Code 001 under Project number 88881.310728/2018-01 and by the National Council for Scientific and Technological Development(CNPq-Brazil) Project number PVE-CNPq-407102/2013-2 

主　　题：MAX phases Ti3SiC2 screen printing in situ synthesis electrical conductivity 

摘      要：This work reports on the development of pastes containing Ti,TiC,Si,and C elementary powders for in situ synthesis of Ti3SiC2 via screen *** paste compositions were manufactured using two powder mixtures(Ti/Si/C and Ti/TiC/Si/C)with different *** pastes were screen printed onto Al2O3 substrates and sintered at 1400℃in argon varying the dwell time from 1 to 5 *** printed pastes containing TiC and excess of Si exhibited the lowest surface roughness and after 5 h sintering comprised of Ti3SiC2 as the majority *** electrical conductivity of this sample was found to range from 4.63×10^(4)to 2.57×10^(5)S·m^(-1)in a temperature range of 25-400℃.