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Hollow-core antiresonant terahertz fiber-based TOPAS extruded from a 3D printer using a metal 3D printed nozzle

Photonics research 2021年第8期9卷 1513-1521页

作者： WANVISA TALATAISONG JON GORECKI LIEKE D.VAN PUTTEN RAND ISMAEEL JAMES WILLIAMSON KATIE ADDINALL DANIEL SCHWENDEMANN MARTYNAS BERESNA VASILIS APOSTOLOPOULOS GILBERTO BRAMBILLA ptoelectronics research centre University of SouthamptonSouthamptonS0171BJUK School of Physics Suranaree University of TechnologyNakhon Ratchasima30000Thailand School of Physics and Astronomy University of SouthamptonSouthamptonS0171BJUK National Oceanography centre SouthamptonS0143ZHUK centre for Precision Technologies University of HuddersfieldHuddersfieldHD13DHUK lnstitute for Material Science and Plastics Processing University of Applied Sciences Eastern SwitzerlandRapperswil8640Switzerland

We report the use of a terahertz(THz)transparent material,cyclic olefin copolymer(COC or TOPAS),for fabricating a hollow-core antiresonant fiber that provides an electromagnetic wave guidance in the THz regime.A novel fabrication technique to realize a hollow-core antiresonant polymer optical fiber(HC-ARPF)for THz guidance is proposed and *** fiber is directly extruded in a single-step procedure using a conventional fused deposition modeling 3 D *** fiber geometry is defined by a structured nozzle manufactured with a metal 3 D printer,which allows tailoring of the nozzle design to the various geometries of microstructured optical *** possibility to use the HC-ARPF made from TOPAS for guiding in the THz region is theoretically and experimentally assessed through the profile of mode simulation and time-frequency diagram(spectrogram)analysis.

关键词： fiber printer resonant

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Effect of Al Doping in the InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown by Metalorganic Chemical Vapour Deposition

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Chinese Physics Letters 2006年第1期23卷 256-258页

作者：陆羽杨志坚潘尧波徐科胡晓东章蓓张国义 School of Physics and State Key Laboratory for Mesoscopic Physics Research Center for Wide Gap Semiconductor Peking University 100871

The effect of Al doping in the GaN layer of InGaN/GaN multiple quantum-well light emitting diodes （LEDs） grown by metalorganic chemical vapour deposition is investigated by using photoluminescence （PL） and highresolution x-ray diffraction. The full width at half maximum of PL of A1 doped LEDs is measured to be about 12nm. The band edge photoluminescence emission intensity is enhanced significantly. In addition, the in-plane compressive strain in the Al-doped LEDs is improved significantly and measured by reciprocal space map. The output power of Al-doped LEDs is 130mW in the case of the induced current of 200mA.

关键词： GAN FILMS

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Light-matter interaction in 2D materials: from grpahene to TMDs

Light-matter interaction in 2D materials: from grpahene to T...

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中国化学会第29届学术年会

作者：于霆 Division of Physics and Applied School of Physical and Mathematical SciencesNanyang Technological University Department of Physics National University of Singapore Graphene centre National University of Singapore

Graphene and other atom ically thin tran sition metal dichalcogenides（TMDs）, as exceptional two dimensional materials, possess extremely promising potential for fundamental studies and prac tical applications. Here we report our studies on 2D materials such as graphene, MoS2, TaSe2 and WS2. Photons, electrons, phonons and the interaction among them are systematically investigated through various optical probes. The results presented here are high ly relevant to the applic ation of 2D materials in nano-electronics and o ptoelectronics and help in developing a better understanding of the optical and electrical properties of these 2D materials.

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