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Heterogeneous tunable Ⅲ-Ⅴ-on-silicon-nitride mode-locked laser emitting wide optical spectra

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Photonics Research 2024年第3期12卷 I0021-I0027页

作者： MAXIMILIEN BILLET STIJN CUYVERS STIJN POELMAN ARTUR HERMANS SANDEEP SEEMA SASEENDRA TASUKU NAKAMURA SHINYA OKAMOTO YASUHISA INADA KAZUYA HISADA TAKU HIRASAWA JOAN RAMIREZ DELPHINE NÉEL NICOLAS VAISSIÈRE JEAN DECOBERT PHILIPPE SOUSSAN XAVIER ROTTENBERG GUNTHER ROELKENS JONØ.KJELLMAN BART KUYKEN Photonics Research Group Department of Information TechnologyGhent University-imec9052 GhentBelgium imec 3001 LeuvenBelgium Technology Division Panasonic Holdings CorporationMoriguchi-CityOsakaJapan Ⅲ-Ⅴ Lab F91767 PalaiseauFrance

We demonstrate a Ⅲ-Ⅴ-on-silicon-nitride mode-locked laser through the heterogeneous integration of a semiconductor optical amplifier on a passive silicon-nitride cavity using the technique of micro-transfer printing. In the initial phase of our study, we focus on optimizing the lasing wavelength to be centered at 1550 nm. This optimization is achieved by conducting experiments with 27 mode-locked lasers, each incorporating optical amplifiers featuring distinct multiple-quantum-well photoluminescence values. Subsequently we present a comprehensive study investigating the behavior of the mode-locking regime when the electrical driving parameters are varied. Specifically, we explore the impact of the gain voltage and saturable absorber current on the locking stability of a tunable mode-locked laser. By manipulating these parameters, we demonstrate the precise control of the optical spectrum across a wide range of wavelengths spanning from 1530 to 1580 nm. Furthermore, we implement an optimization approach based on a Monte Carlo analysis aimed at enhancing the mode overlap within the gain region. This adjustment enables the achievement of a laser emitting a 23-nm-wide spectrum while maintaining a defined 10 dB bandwidth for a pulse repetition rate of 3 GHz.

关键词： tunable amplifier mode

Chalcogenide Ovonic Threshold Switching Selector

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Nano-Micro Letters 2024年第5期16卷 1-40页

作者： Zihao Zhao Sergiu Clima Daniele Garbin Robin Degraeve Geoffrey Pourtois Zhitang Song Min Zhu National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050People’s Republic of China University of Chinese Academy of Sciences Beijing 100029People’s Republic of China imec Kapedreef 75LeuvenBelgium

Today’s explosion of data urgently requires memory technologies capable of storing large volumes of data in shorter time frames,a feat unattain-able with Flash or *** Optane,commonly referred to as three-dimensional phase change memory,stands out as one of the most promising *** Optane with cross-point architecture is constructed through layering a storage element and a selector known as the ovonic threshold switch(OTS).The OTS device,which employs chalcogenide film,has thereby gathered increased attention in recent *** this paper,we begin by providing a brief introduction to the discovery process of the OTS ***,we summarize the key elec-trical parameters of OTS devices and delve into recent explorations of OTS materials,which are categorized as Se-based,Te-based,and S-based material ***,we discuss various models for the OTS switching mechanism,including field-induced nucleation model,as well as several carrier injection ***,we review the progress and innovations in OTS mechanism ***,we highlight the successful application of OTS devices in three-dimensional high-density memory and offer insights into their promising performance and extensive prospects in emerging applications,such as self-selecting memory and neuromorphic computing.

关键词： Non-volatile memory Ovonic threshold switch(OTS) Chalcogenide Selector

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可以放在鞋盒中的数据中心

科技纵览 2024年第6期 38-43,4页

作者： Anna Herr Quentin Herr imec

比利时微电子研究中心计划利用超导缩小计算机。科学家预测,到2040年,计算消耗的电力将占全球总量的50%。这一预测是在生成式人工智能爆发之前作出的。过去十多年来,训练大型人工智能模型所需的计算资源大约每6个月就会翻一番。按照这... 详细信息

比利时微电子研究中心计划利用超导缩小计算机。科学家预测,到2040年,计算消耗的电力将占全球总量的50%。这一预测是在生成式人工智能爆发之前作出的。过去十多年来,训练大型人工智能模型所需的计算资源大约每6个月就会翻一番。按照这个速度,到2030年,训练一个人工智能模型所需的计算资源将是当前十大超级计算机年度所需资源之和的100倍。简而言之,计算需要的巨大电力能源,很快将超出地球所能提供的范围。

关键词：数据中心超级计算机人工智能计算资源电力能源微电子生成式计算消耗

Dual-logic-in-memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure

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InfoMat 2024年第2期6卷 107-117页

作者： Jingjie Niu Sumin Jeon Donggyu Kim Sungpyo Baek Hyun Ho Yoo Jie Li Ji-Sang Park Yoonmyung Lee Sungjoo Lee SKKU Advanced Institute of Nanotechnology(SAINT) Sungkyunkwan UniversitySuwonRepublic of Korea Department of Nano Science and Technology Sungkyunkwan UniversitySuwonRepublic of Korea Department of Electrical and Computer Engineering Sungkyunkwan UniversitySuwonRepublic of Korea imec HeverleeBelgium Department of Nano Engineering Sungkyunkwan UniversitySuwonRepublic of Korea

The rapid advancement of AI-enabled applications has resulted in an increasing need for energy-efficient computing ***-in-memory is a promising approach for processing the data stored in memory,wherein fast and efficient computations are possible owing to the parallel execution of reconfigurable logic *** this study,a dual-logic-in-memory device,which can simultaneously perform two logic operations in four states,is demonstrated using van der Waals ferroelectric field-effect transistors(vdW FeFETs).The proposed dual-logic-in-memory device,which also acts as a twobit storage device,is a single bidirectional polarization-integrated ferroelectric field-effect transistor(BPI-FeFET).It is fabricated by integrating an in-plane vdW ferroelectric semiconductor SnS and an out-of-plane vdW ferroelectric gate dielectric material—CuInP_(2)S_(6).Four reliable resistance states with excellent endurance and retention characteristics were *** two-bit storage mechanism in a BPI-FeFET was analyzed from two perspectives:carrier density and carrier injection controls,which originated from the out-of-plane polarization of the gate dielectric and in-plane polarization of the semiconductor,*** conventional multilevel FeFETs,the proposed BPIFeFET does not require additional pre-examination or erasing steps to switch from/to an intermediate polarization,enabling direct switching between the four memory *** utilize the fabricated BPI-FeFET as a dual-logic-inmemory device,two logical operations were selected(XOR and AND),and their parallel execution was *** types of logic operations could be implemented by selecting different initial states,demonstrating various types of functions required for numerous neural network *** flexibility and efficiency of the proposed dual-logic-in-memory device appear promising in the realization of next-generation low-power computing systems.

关键词： ferroelectric field-effect transistor in-plane ferroelectricity logic-in-memory out-of-plane ferroelectricity

Hybrid material integration in silicon photonic integrated circuits

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Journal of Semiconductors 2021年第4期42卷 33-42页

作者： Swapnajit Chakravarty† Min Teng Reza Safian Leimeng Zhuang imec usa 194 Neocity WayKissimmeeFL 34744USA

Hybrid integration ofⅢ-Ⅴand ferroelectric materials is being broadly adopted to enhance functionalities in silicon photonic integrated circuits(PICs).Bonding and transfer printing have been the popular approaches for integration of III–V gain media with silicon *** approaches are also being considered for ferroelectrics to enable larger RF modulation bandwidths,higher linearity,lower optical loss integrated optical modulators on *** this paper,we review existing integration strategies ofⅢ-Ⅴmaterials and present a route towards hybrid integration of bothⅢ-Ⅴand ferroelectrics on the same *** show that adiabatic transformation of the optical mode between hybrid ferroelectric and silicon sections enables efficient transfer of optical modal energies for maximum overlap of the optical mode with the ferroelectric media,similar to approaches adopted to maximize optical overlap with the gain section,thereby reducing lasing thresholds for hybridⅢ-Ⅴintegration with silicon *** designs are presented to enable a foundry compatible hybrid integration route of diverse functionalities on silicon PICs.

关键词： CMOS technology photonic integrated circuits hybrid integration ferroelectric modulator

Kinetic Monte Carlo simulations of plasma-surface reactions on heterogeneous surfaces

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Frontiers of Chemical Science and Engineering 2019年第4期13卷 815-822页

作者： Daniil Marinov imec 3001 LeuvenBelgium

Reactions of atoms and molecules on chamber walls in contact with low temperature plasmas are important in various technological ***-surface interactions are complex and relatively poorly *** performed over the last decade by several groups prove that interactions of reactive species with relevant plasma-facing materials are characterized by distributions of adsorption energy and *** this paper,we develop a kinetic Monte Carlo(KMC)model that can effectively handle chemical kinetics on such heterogenous *** this model,we analyse published adsorption-desorption kinetics of chlorine molecules and recombination of oxygen atoms on rotating substrates as a test case for the KMC model.

关键词： plasma-surface interaction kinetic Monte Carlo plasma nano technology

Numerical modeling of a linear photonic system for accurate and efficient time-domain simulations

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Photonics Research 2018年第6期6卷 560-573页

作者： YINGHAO YE DOMENICO SPINA YUFEI XING WIM BOGAERTS TOM DHAENE IDLab Department of Information TechnologyGhent University-imec Photonics Research Group Department of Information TechnologyGhent University-imec

In this paper, a novel modeling and simulation method for general linear, time-invariant, passive photonic devices and circuits is proposed. This technique, starting from the scattering parameters of the photonic system under study, builds a baseband equivalent state-space model that splits the optical carrier frequency and operates at baseband, thereby significantly reducing the modeling and simulation complexity without losing ***, it is possible to analytically reconstruct the port signals of the photonic system under study starting from the time-domain simulation of the corresponding baseband equivalent model. However, such equivalent models are complex-valued systems and, in this scenario, the conventional passivity constraints are not applicable anymore. Hence, the passivity constraints for scattering parameters and state-space models of baseband equivalent systems are presented, which are essential for time-domain simulations. Three suitable examples demonstrate the feasibility, accuracy, and efficiency of the proposed method.

关键词： Wavelength filtering devices Systems design Photonic integrated circuits

A flexible ECG patch compatible with NFC RF communication

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npj Flexible Electronics 2020年第1期4卷 126-133页

作者： Mohammad Zulqarnain Stefano Stanzione Steve Smout Myriam Willegems Kris Myny Eugenio Cantatore Integrated Circuits Group Eindhoven University of TechnologyEindhovenThe Netherlands Holst Centre/imec EindhovenThe Netherlands imec LeuvenBelgium

With the advent of the internet of things,flexible wearable devices are gaining significant research interest,as they are unobtrusive,comfortable to wear and can support continuous observation of physiological signals,helping to monitor wellness or diagnose *** Indium Gallium Zinc Oxide(a-IGZO)Thin Film Transistors(TFTs)fabricated on flexible substrates are an attractive option to build such bio-signal monitoring systems due to their flexibility,conformability to the human body,and low *** paper presents a flexible electrocardiogram(ECG)patch implemented on foil with self-aligned IGZO TFTs,which is capable to acquire the ECG signals,amplify them and convert them to a sequence of *** analogue frontend has a measured input-referred noise of 8μV_(rms) in the 1-100 Hz *** system achieves experimentally 67.4 dB CMRR,58.9 dB PSRR,and 16.5 MΩinput impedance at 50 Hz while using 1 kHz *** signal from the electrodes is transformed to a 105.9-kb/s Manchester-encoded serial bit stream which could be sent wirelessly to a smart phone via Near Field Communication(NFC)for further *** consumption is 15.4 mW for the digital and 280μW for the analogue *** contribution shows the fundamental steps to demonstrate intelligent plasters for biomedical applications based on flexible electronics providing an NFC-compatible digital output bit stream.

关键词： NFC communication patch

Time-domain compact macromodeling of linear photonic circuits via complex vector fitting

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Photonics Research 2019年第7期7卷 86-97页

作者： Yinghao Ye Domenico Spina Dirk Deschrijver Wim Bogaerts Tom Dhaene IDLab Department of Information TechnologyGhent University-imecGhentBelgium Photonics Research Group Department of Information TechnologyGhent University-imecGhentBelgium The Center for Nano-and Biophotonics(NB-Photonics) GhentBelgium

In this paper, a novel baseband macromodeling framework for linear passive photonic circuits is proposed, which is able to build accurate and compact models while taking into account the nonidealities,such as higher order dispersion and wavelength-dependent losses of the circuits. Compared to a previous modeling method based on the vector fitting algorithm, the proposed modeling approach introduces a novel complex vector fitting technique. It can generate a half-size state-space model for the same applications, thereby achieving a major improvement in efficiency of the time-domain simulations. The proposed modeling framework requires only measured or simulated scattering parameters as input,which are widely used to represent linear and passive systems. Three photonic circuits are studied to demonstrate the accuracy and efficiency of the proposed technique.

关键词： Time-domain compact circuits parameters