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Optimizing local search-based partial MaxSAT solving via initial assignment prediction

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Science China(Information Sciences) 2025年第2期68卷 59-73页

作者： Chanjuan LIU Guangyuan LIU Chuan LUO Shaowei CAI Zhendong LEI Wenjie ZHANG Yi CHU Guojing ZHANG school of Computer Science and Technology Dalian University of Technology school of software Beihang University Institute of software Chinese Academy of Sciences school of Computer Science Peking University

Partial maximum satisfiability(PMS) is a significant generalization of Boolean satisfiability(SAT) and maximum satisfiability(MaxSAT), by introducing hard clauses and soft clauses. Compared with SAT and MaxSAT, the PMS problem has more real-world applications where both hard and soft constraints are involved. Local search is an effective incomplete method for solving PMS and is useful for important domains where good-quality solutions are desired within reasonable *** local search PMS solvers, the approach for initial assignment generation is crucial because its effectiveness significantly affects practical performance. In this study, we propose a novel initial assignment prediction approach, called InitPMS. When predicting an assignment for PMS, InitPMS considers the specific structure of PMS instances, i.e., distinguishing hard and soft clauses. Our experiments on extensive PMS instances from MaxSAT evaluations(MSEs) 2020 and 2021 show that InitPMS significantly boosts the performance of five state-of-the-art local search PMS solvers, demonstrating its generality. In addition,our results indicate that incorporating InitPMS could improve the performance of one of the best incomplete PMS solvers in MaxSAT Evaluation 2021, indicating that InitPMS might help advance the state of the art in PMS solving.

关键词： MaxSAT local search initial assignment incomplete method assignment prediction

Deep learning-based software engineering: progress,challenges, and opportunities

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Science China(Information Sciences) 2025年第1期68卷 57-144页

作者： Xiangping CheN Xing HU Yuan HUANG he JIANG Weixing JI Yanjie JIANG Yanyan JIANG Bo LIU Hui LIU Xiaochen LI Xiaoli LIAN Guozhu MENG Xin PENG Hailong SUN Lin SHI Bo WANG Chong WANG Jiayi WANG Tiantian WANG Jifeng XUAN Xin XIA Yibiao YANG Yixin YANG Li ZHANG Yuming ZHOU Lu ZHANG school of Journalism and Communication Sun Yat-sen University school of software Technology Zhejiang University school of software Engineering Sun Yat-sen University school of software Dalian University of Technology school of Computer Science and Technology Beijing Institute of Technology Key Laboratory of High Confidence software Technologies (Peking University) Ministry of EducationSchool of Computer Science Peking University State Key Laboratory for Novel software Technology Nanjing University school of Computer Science and Engineering Beihang University Institute of Information Engineering Chinese Academy of Sciences school of Computer Science Fudan University State Key Laboratory of Complex & Critical software Environment (CCSE) School of Software Beihang University school of Computer and Information Technology Beijing Jiaotong University school of Computer Science and Technology Harbin Institute of Technology school of Computer Science Wuhan University Huawei Technologies

Researchers have recently achieved significant advances in deep learning techniques, which in turn has substantially advanced other research disciplines, such as natural language processing, image processing, speech recognition, and software engineering. Various deep learning techniques have been successfully employed to facilitate software engineering tasks, including code generation, software refactoring, and fault localization. Many studies have also been presented in top conferences and journals, demonstrating the applications of deep learning techniques in resolving various software engineering tasks. However,although several surveys have provided overall pictures of the application of deep learning techniques in software engineering,they focus more on learning techniques, that is, what kind of deep learning techniques are employed and how deep models are trained or fine-tuned for software engineering tasks. We still lack surveys explaining the advances of subareas in software engineering driven by deep learning techniques, as well as challenges and opportunities in each subarea. To this end, in this study, we present the first task-oriented survey on deep learning-based software engineering. It covers twelve major software engineering subareas significantly impacted by deep learning techniques. Such subareas spread out through the whole lifecycle of software development and maintenance, including requirements engineering, software development, testing, maintenance, and developer collaboration. As we believe that deep learning may provide an opportunity to revolutionize the whole discipline of software engineering, providing one survey covering as many subareas as possible in software engineering can help future research push forward the frontier of deep learning-based software engineering more systematically. For each of the selected subareas,we highlight the major advances achieved by applying deep learning techniques with pointers to the available datasets i

关键词： deep learning software engineering software benchmark software artifact representation survey

Physics based circuit compatible model for hybrid antiferroelectric random access memory

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Science China(Information Sciences) 2025年第1期68卷 396-397页

作者： Qiuxia WU Yue PENG Wenwu XIAO Wenxuan MA Shuo ZHANG Litao SUN Chunfu ZHANG Xiaohua MA Yue HAO school of microelectronics Xidian University Xi'an Uni IC Semiconductors

Since the discovery of HfO2-based ferroelectric （FE） materials in 2011,considerable advancements have been made in material preparation,mechanism research,and device realization [1].Consequently,these materials are now regarded as leading candidates for embedded non-volatile memory（eNVM）.Beyond eNVM applications,recent studies have demonstrated that memory devices with antiferroelectric（AFE） films can achieve high response speeds,low latency,and reduced power consumption while maintaining excellent endurance characteristics [2,3].Additionally,the typical double hysteresis loops and multiple non-overlapping polarization current peaks of AFE films offer a novel approach to designing multistate ***,in order to further promote the application of high storage density AFE,an AFRAM electronic design automation （EDA） model must be developed,and it has yet to be proposed.

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An AND-type 1T-FeFET array with robust write and read operations

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Science China(Information Sciences) 2025年第2期68卷 395-396页

作者： Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CheN Gaobo LIN Rongzong SheN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CheN Ran CheNG Gaobo XU Huaxiang YIN Yan LIU Jiajia CheN Chengji JIN Genquan HAN Hangzhou Institute of Technology and school of microelectronics Xidian University Zhejiang Lab College of Integrated Circuits Zhejiang University Key Laboratory of microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

HfO2-based ferroelectric field-effect transistor（Fe FET） has become a promising solution for next-generation embedded non-volatile memory（NVM） owing to its complementary metal-oxide-semiconductor（CMOS） compatibility,small footprint, high performance, and non-destructive readout [1]. Recent research of HfO2-based Fe FET has focused on the device operation mechanisms as well as reliability issues such as the interplay between polarization switching and charge trapping/detrapping [2], read-after-write latency [3] and endurance degradation [4].

关键词： Ferroelectric devices

Analysis and solution of streak effect in high dynamic range CMOS image sensors

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Science China(Information Sciences) 2025年第1期68卷 402-403页

作者： Wanbin ZHA Jiangtao XU Jinghua AO Kaiming NIE Zhiyuan GAO school of microelectronics Tianjin University Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology Tianjin University

The high dynamic range (HDR) CMOS image sensor has been widely used in many fields,such as autonomous driving and security guarding [1].The dual conversion gain (DCG)structure,which adjusts the conversion gain (CG) by changing the capacitors connected to the floating diffusion (FD)nodes in the pixel,is an effective and prevalent method for realizing HDR imaging [2].While the DCG structure can extend the dynamic range,in the practical HDR imaging process,the substantial number of photo-generated electrons in bright areas can cause significant voltage variations in the pixel *** variations affect the gray values in darker areas of the same image,leading to the streak effect [3].This study primarily investigates the streak effect caused by forward conduction current of the PN junction in DCG pixels,and proposes a circuit to suppress this effect.

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Low-profile,low sidelobe array antenna with ultrawide beam coverage for UAV communication

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Chinese Journal of Aeronautics 2025年第1期38卷 444-454页

作者： Mei LI Zhiliang SHANG Lin PU Ming-Chun TANG Lei ZHU school of microelectronics and Communication Engineering Chongqing UniversityChongqing 400044China Department of Electrical and Computer Engineering University of MacaoMacao SAR 999078China

This paper presents a design method to implement an antenna array characterized by ultra-wide beam coverage,low profile,and low Sidelobe Level(SLL)for the application of Unmanned Aerial Vehicle(UAV)air-to-ground *** array consists of ten broadside-radiating,ultrawide-beamwidth elements that are cascaded by a central-symmetry series-fed network with tapered currents following Dolph-Chebyshev distribution to provide low ***,an innovative design of end-fire Huygens source antenna that is compatible with metal ground is presented.A low-profile,half-mode Microstrip Patch Antenna(MPA)is utilized to serve as the magnetic dipole and a monopole is utilized to serves as the electric dipole,constructing the compact,end-fire,grounded Huygens source ***,two opposite-oriented end-fire Huygens source antennas are seamlessly integrated into a single antenna element in the form of monopole-loaded MPA to accomplish the ultrawide,broadside-radiating *** consideration has been applied into the design of series-fed network as well as antenna element to compensate the adverse coupling effects between elements on the radiation *** indicates an ultrawide Half-Power Beamwidth(HPBW)of 161°and a low SLL of-25 dB with a high gain of 12 d Bi under a single-layer *** concurrent ultrawide beamwidth and low SLL make it particularly attractive for applications of UAV air-to-ground communication.

关键词： Array antenna Broad beam Fan beam Low sidelobe level Chebyshev synthesis UAV communication

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Adaptive-basis decomposition-based low-rank network for efficient non-uniform motion deblurring

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Optoelectronics Letters 2025年第1期21卷 43-50页

作者： CheN Lei XIONG Qingbo ZHANG Wei LI Runde school of software Henan UniversityKaifeng 475004China school of Applied Technology China University of Labor RelationsBeijing 100048China

In this study,we present a unified sparsity-driven framework that significantly enhances motion deblurring performance by integrating two key components:a custom-designed dataset and a low-rank module(LRM).This framework leverages the inherent sparsity of per-pixel blur kernels to bolster both deblurring accuracy and model ***,we propose an adaptive-basis decomposition-based deblurring(ADD)approach,which constructs a tailored training dataset to enhance the generalization capacity of the deblurring *** ADD framework adaptively decomposes motion blur into sparse basis elements,effectively addressing the intricacies associated with non-uniform ***,an LRM is proposed to improve the interpretability of deblurring models as a plug-and-play module,primarily designed to identify and harness the intrinsic sparse features in sharp images.A series of ablation studies have been conducted to substantiate the synergistic advantages of combining the proposed ADD with the LRM for overall improvement in deblurring ***,we empirically demonstrate through rigorous experimentation that incorporating the LRM into an existing Uformer network leads to substantial enhancement in reconstruction *** integration yields a sparsity-guided low-rank network(SGLRN).Operating under the overarching principle of sparsity,SGLRN consistently outperforms state-of-the-art methods across multiple standard deblurring *** experimental results,assessed through quantitative metrics and qualitative visual evaluations,provide compelling evidence of its *** overall deblurring results are available at Google Drive.

关键词： network motion uniform

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1.56 kV/30 A vertical β-Ga2O3 Schottky barrier diodes with composite edge terminations

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Science China(Information Sciences) 2025年第2期68卷 389-390页

作者： Yitao FENG Hong ZHOU Sami ALGHAMDI Hao FANG Xiaorong ZHANG Yanbo CheN Guotao TIAN Saud WASLY Yue HAO Jincheng ZHANG Key Lab of Wide Band Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University Center of Excellence in Intelligent Engineering Systems (CEIES) King Abdulaziz University China Resources microelectronics Limited

In recent years, large-area wide-bandgap（WBG） semiconductor materials have achieved numerous notable breakthroughs [1,2]. The ultra-WBG semiconductor β-Ga2O3,with its excellent material properties, is ideally suited for the fabrication of power devices. Moreover, it offers easily obtainable large-area substrates, with reported sizes up to 6 inches, produced through melt-grown crystal growth methods. These characteristics make β-Ga2O3highly attractive for future low-cost commercialization. Despite these advances, most research has focused on low-current and small-size diodes, with few studies addressing high-current and large-size diodes.

关键词： Schottky barrier diodes

Optimization of electrode distance and 2D material coverage for PdSe2-based waveguide-integrated photodetectors

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Science China Technological Sciences 2025年第3期68卷 323-334页

作者： Tianxun GONG Beilin ZHU Luyu LV Zhengyi LIU Xiaosheng ZHANG school of Integrated Circuit Science and Engineering (Exemplary school of microelectronics) University of Electronic Science and Technology of China

Silicon-based waveguide-integrated photodetectors, leveraging their distinct advantages, have become crucial components in integrated photonic circuits. Despite achieving combined designs of two-dimensional materials and silicon waveguides, understanding the underlying mechanisms and optimizing structural designs remains challenging. In this study, we systematically investigated the impact of electrode distances on the optical loss and photoelectric response of PdSe2-based strip,rib, and slot waveguide-integrated photodetectors. Optimal electrode distances were determined, leading to significant enhancements in responsivity. Specifically, our devices demonstrated high responsivity values of 9.24 A/W（strip）, 3.34 A/W（rib）, and 4.52 A/W（slot） at 1550 nm. These results represent remarkable enhancements of 481%, 237%, and 267%, respectively, compared to the initial unoptimized electrode configurations. Additionally, we found the slot waveguide-integrated photodetector achieves 34% of absorption saturation with PdSe2coverage of approximately 10 μm, while the rib waveguide enables 70% absorption（not yet saturated） with PdSe2coverage of 50 μm. Furthermore, we explored the effect of input power on the performance of these photodetectors, finding that lower input optical power yields higher responsivity and external quantum efficiency（EQE）, especially for slot waveguide-integrated photodetectors. Additionally, these detectors exhibit fast optical response rates across the optical communication O to U bands, with strip, rib and slot waveguide-integrated photodetectors demonstrating 3 dB bandwidths of 23.10, 14.49, and 14.86 GHz, respectively.

关键词： silicon waveguide photodetector PdSe2 electrode distance responsivity