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nano Research 2017年第1期10卷 238-246页

作者： Changhong Wang Feng Hu Hongchao Yang Yejun Zhang Huan Lu Qiangbin Wang Key Laboratory of nano-Bio Interface Division of Nanobiomedicine and i-Lab Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China School of nano-Tech and nano-Bionics University of Science and Technology of China Suzhou 215123 China

Cost-effective electrocatalysts for the hydrogen evolution reaction （HER） play a key role in the field of renewable energy. Although tremendous efforts have been devoted to the search of alternative materials, Pt/C is still the most efficient electrocatalyst for the HER. Nevertheless, decreasing the loading of Pt in the designed eletrocatalysts is of significance. However, with low Pt loading, it is challenging to maintain excellent catalytic performance. Herein, a new catalyst （Pt/NPC） was prepared by dispersing Pt nanoparticles （PtNPs） with an average diameter of 1.8 nm over a three-dimensional （3D） carbon network co-doped with N and P. Because of the high electronegativity of the N and P dopants, PtNPs were uniformly dispersed on the carbon network via high electronic affinity between Pt and carbon, affording a Pt/NPC catalyst; Pt/NPC exhibited superior HER activity, attributed to the down-shift of the Pt d-band caused by the donation of charge from N and P to Pt. The results show that Pt/NPC with an ultralow Pt loading of 1.82 wt.% exhibits excellent HER performance, which corresponds to a HER mass activity 20.6-fold greater than that observed for commercial 20% Pt/C at an overpotential of 20 mV vs. RHE.

关键词： electrocatalysis Pt N and P co-doped carbon hydrogen evolution reaction

Microstructure of Zn-Al4 alloy microcastings by micro precision casting based on metal mold

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中国有色金属学会会刊：英文版 2008年第2期18卷 327-332页

作者：李邦盛任明星杨闯傅恒志 Micro/nano Technology Research Center Harbin Institute of Technology School of Materials science and engineering Harbin Institute of Technology

Metal mold micron scale precision casting technology was developed successfully,and three-dimension complicated microgear castings in micron scale were *** regularity of microgear castings were observed by optical microscope and scanning electron *** with conventional casting,microcasting is characterized by typical nonequilibrium solidification,for example,its grain size can be refined significantly,eutectic structure is transformed from lamellar morphology to rod eutectic,and the ratio of primary phase is *** kind of microstructure can promote mechanical properties of microcasting.

关键词：微观结构锌铝合金精密铸件

Improving InGaN-LED performance by optimizing the patterned sapphire substrate shape

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Chinese Physics B 2012年第3期21卷 365-370页

作者：黄小辉刘建平范亚明孔俊杰杨辉王怀兵 Suzhou institute of nano-Tech and nano-Bionics Chinese Academy of Sciences

The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates （PSSes） with different values of fill factor （f） and slanted angle （0） are investigated in detail. The threading dislocation （TD） density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency （IQE）. Also the ability of the LED to withstand the electrostatic discharge （ESD） increases as the fill factor decreases. The illumination output power of the LED is affected by both 0 and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tan 0 and f is higher than that with a higher production of tan 0 and f.

关键词： GaN Patterned sapphire substrate light emitting diode

Optoelectronic platform and technology

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Frontiers of Information Technology & Electronic engineering 2019年第4期20卷 439-457页

作者： Wen-hua SHI Wei-ming LV Tian-yu SUN Bao-shun ZHANG Suzhou institute of nano-Tech and nano-Bionics Chinese Academy of Sciences

Optoelectronic technology is a new technology formed by the combination of photon technology and electronic technology. Photon technology can cause an industrial revolution that supersedes electronic technology, because it will have a deeper impact on industry and society. We review the development of optoelectronic devices and integration technologies. We compare and analyze the development and characteristics of optoelectronic technology platforms, summarize the key manufacturing technologies, introduce several representative optoelectronic devices including flexible devices, and focus on the key breakthrough technologies that need to be achieved. Through a comprehensive review of the development of optoelectronic technology, China should seize the opportunity for a transformation of the optoelectronic technology industry. By drawing on the experiences with advanced optoelectronic platforms and technologies in foreign countries, we should speed up the accumulation and reserves of Chinese industrial talents, pay attention to the accumulation of basic technology, and establish a national optoelectronic technology platform, to greatly enhance domestic levels in these regards and to achieve independent innovations with these devices.

关键词： Optoelectronic technology Optoelectronic platform Process technology Development and challenges

An Al0.25Ga0.75N/GaN Lateral Field Emission Device with a nano Void Channel

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Chinese Physics Letters 2018年第3期35卷 106-109页

作者：赵德胜刘冉付凯于国浩蔡勇黄宏娟王逸群孙润光张宝顺 The State Key Laboratory of ASIC and Systems School of Information Science and TechnologyFudan University nano Fabrication Facility Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences

We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A -45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the OaN- based field emission device shows a low turn-on voltage of 2.3 V, a high emission current of -40 μA （line current density 2.3mA/cm） at a collector bias Vc = 3 V, and a low reverse leakage of 3nA at Vc = -3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the AlGaN/GaN heterojunction. This type of device may have potential applications in high frequency mieroelectronics or nanoelectronics.

关键词： Ga An Al N/GaN Lateral Field Emission Device with a nano Void Channel

Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process

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Chinese Physics B 2016年第11期25卷 571-575页

作者：于淑珍宋焱董建荣孙玉润赵勇明何洋 Key Laboratory of nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China nano science and Technology institute University of Science and Technology of China Suzhou 215123 China University of Chinese Academy of sciences Beijing 100049 China

Low metal-graphene contact resistance is important in making high-performance graphene *** this work,we demonstrate a lower specific contact resistivity of Au0.88Ge0.12/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au *** rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact *** reveal that both pre- and post-annealing processes are effective for reducing the contact *** specific contact resistivity decreases from 2.5 × 10^-4 to 7.8 × 10^-5 Ω·cm^2 by pre-annealing at 300 ℃ for one hour,and continues to decrease to 9.5 × 10^-7 H·cm2 after post-annealing at 490 ℃ for 60 *** approaches provide reliable means of lowering contact resistance.

关键词： annealing resistivity annealed lithography contacts doping alloyed lowering align methacrylate

Luminescence mechanism and energy level structure of Eu-doped GaN powders investigated by cathodoluminescence spectroscopy

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science China(Physics,Mechanics & Astronomy) 2014年第4期57卷 628-631页

作者： WANG XiaoDan Zeng XiongHui XU Ke MAO HongMin MA ChunLan Department of Physics Suzhou University of Science and Technology Suzhou institute of nano-tech and nano-bionics Chinese Academy of Sciences

1.5at% Eu-doped GaN powders were prepared by a co-precipitation *** X-ray diffraction(XRD)results shows that there is only the wurtzite *** spectra were measured at room temperature and liquid nitrogen temperature,*** band-to-band luminescence of GaN was shifted from 373 nm to 368 nm with the temperature decreasing from room temperature to liquid nitrogen *** luminescence peaks at 537,557,579,590,597,614,653 and 701 nm are attributed to the Eu ions related transitions in the host of GaN powders and the peak positions were not influenced by the variation of *** the increase of accelerating voltage,the intensity of all luminescence peaks was *** strongest luminescence peak at 614 nm shows non-symmetrical shape and is composed of 612,615 and 621 nm through Lorentzian fitting,which indicates there are oxygen and nitrogen environments of the Eu3+ions in the Eu-doped GaN powders.

关键词： Eu GaN energy level spectrum

Regulating crystallization and retarding oxidation in Sn-Pb perovskite via 1D cation engineering for high performance all-perovskite tandem solar cells

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Journal of Energy Chemistry 2025年第1期 646-652页

作者： Ranran Liu Xin Zheng Zaiwei Wang Miaomiao Zeng Chunxiang Lan Shaomin Yang Shangzhi Li Awen Wang Min Li Jing Guo Xuefei Weng Yaoguang Rong Xiong Li Michael Gr?tzel Center for Mesoscopic Solar Cells Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology institute of Technology for Carbon Neutrality Shenzhen Institute of Advanced Technology Chinese Academy of Sciences School of Physics and Optoelectronic engineering Hainan University Suzhou institute of nano-Tech and nano-Bionics (SInano) Chinese Academy of Sciences School of Chemistry Chemical Engineering and Life Sciences State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology

All-perovskite tandem solar cells have the potential to surpass the theoretical efficiency limit of single junction solar cells by reducing thermalization ***,the challenges encompass the oxidation of Sn2+to Sn4+and uncontrolled crystallization kinetics in Sn-Pb perovskites,leading to nonradiative recombination and compositional heterogeneity to decrease photovoltaic efficiency and operational ***,we introduced an ionic liquid additive,1-ethyl-3-methylimidazolium iodide （EMIMI） into Sn-Pb perovskite precursor to form low-dimensional Sn-rich/pure-Sn perovskites at grain boundaries,which mitigates oxidation of Sn2+to Sn4+and regulates the film-forming dynamics of Sn/Pb-based perovskite *** optimized single-junction Sn-Pb perovskite devices incorporating EMIMI achieved a high efficiency of 22.87%.Furthermore,combined with wide-bandgap perovskite sub-cells in tandem device,we demonstrate 2-terminal all-perovskite tandem solar cells with a power conversion efficiency of 28.34%,achieving improved operational stability.

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Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy

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Chinese Physics B 2021年第12期30卷 550-555页

作者： Xiang-Peng Zhou Hai-Bing Qiu Wen-Xian Yang Shu-Long Lu Xue Zhang Shan Jin Xue-Fei Li Li-Feng Bian Hua Qin School of Microelectronics University of Science and Technology of ChinaHefei 230026China School of nano-Tech and nano-Bionics University of Science and Technology of ChinaHefei 230026China Key Laboratory of nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China

AlN/GaN resonant tunneling diodes(RTDs)were grown separately on freestanding Ga N(FS-GaN)substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy(PA-MBE).Room temperature negative differential resistance(NDR)was obtained under forward bias for the RTDs grown on FS-GaN substrates,with the peak current densities(Jp)of 175-700 kA/cm^(2)and peak-to-valley current ratios(PVCRs)of *** resonant peaks were also observed for some RTDs at room *** effects of two types of substrates on epitaxy quality and device performance of GaN-based RTDs were firstly investigated systematically,showing that lower dislocation densities,flatter surface morphology,and steeper heterogeneous interfaces were the key factors to achieving NDR for RTDs.

关键词： resonant tunneling diodes negative differential resistance molecular beam epitaxy Ⅲ-nitrides

Characteristics of Si-PIN nuclear radiation detectors stacked in series and parallel

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science China(Technological sciences) 2015年第6期58卷 1091-1095页

作者： GAO Xu LI FengHua LU Min JIANG Yong LI Cheng Suzhou institute for Advanced Study University of Science and Technology of China Suzhou institute of nano-tech and nano-bionics Chinese Academy of Sciences CAEP Key Laboratory of Neutron Physics

The silicon-based diodes coated with a thin film of neutron reactive materials have been shown to produce excellent neutron detectors. We have fabricated the thin-film-coated single Si-PIN neutron detectors and stacked ones coupled in series and parallel in this work. The stacked detectors show the advantage of improving the detection efficiency of neutron detecting, which essentially attributes to the increase of the effective detection area. It is shown that the stacked detector in series has more superior performance than the parallel one. This work provides a feasible method to develop solid-state semiconductor neutron detectors with high neutron detection efficiency and high response speed.

关键词： Si-PIN nuclear radiation detectors stack in series and parallel energy resolution