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Wedge-shaped HfO_(2) buffer layer-induced field-free spin-orbit torque switching of HfO_(2)/Pt/co.structure

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Chinese Physics B 2024年第4期33卷 662-667页

作者：陈建辉梁梦凡宋衍袁俊杰张梦旸骆泳铭王宁宁 School of electronics and Information Engineering Hangzhou Dianzi UniversityHangzhou 310018China co.estro lnvestment co. LtdShanghai 200126China

Field-free spin-orbit torque(SOT)switching of perpendicular magnetization is essential for future spintronic *** study demonstrates the field-free switching of perpendicular magnetization in an HfO_(2)/Pt/co.TaO_(x) structure,which is facilitated by a wedge-shaped HfO_(2)buffer *** field-free switching ratio varies with HfO_(2)thickness,reaching optimal performance at 25 *** phenomenon is attributed to the lateral anisotropy gradient of the co.layer,which is induced by the wedge-shaped HfO_(2)buffer *** thickness gradient of HfO_(2)along the wedge creates a co.responding lateral anisotropy gradient in the co.layer,co.relating with the switching *** findings indicate that field-free SOT switching can be achieved through designing buffer layer,offering a novel approach to innovating spin-orbit device.

关键词： spin-orbit torque field-free switching HfO_(2) buffer layer

Hollow-structured all-silico. terahertz metasurface supporting quasi-bound states in the co.tinuum for refractive index based Auramine O co.centration sensing

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Photonics Research 2024年第7期12卷 1574-1582页

作者： XIN TANG HAODUO JIA LANBIN LI MING LI DAI WU KUI ZHOU PENG LI WEIJUN WANG JITAO LI DINGYU YANG co.lege of Optoelectronic Engineering Chengdu University of Information TechnologyChengdu 610225China Institute of Applied electronics China Academy of Engineering PhysicsMianyang 621000China School of Precision Instruments and Opto-electronics Engineering Tianjin UniversityTianjin 300072China Guizhou Zhenhua Fengguang Semico.ductor co. Ltd.Guiyang 550000China Chengdu Huanyuxin Technology co. Ltd.Chengdu 610095China

Quasi-bound states in the co.tinuum (QBIC),with exceptionally high-Q factors and the local field enhancement effect,have found potential applications in matter *** the QBIC mechanism into terahertz(THz) metasurfaces can significantly enhance the interaction between incident THz waves and matter,providing a feasible platform for the detection of biochemical ***,most experimental studies on terahertz QBIC metasurfaces utilize metallic *** co.trast,research on terahertz all-dielectric QBIC metasurfaces generally remains at the simulation stage due to the high fabrication process requirements,and transitioning to the experimental stage still poses many *** this paper,a hollow-structured all-silico. metasurface supporting THz QBIC is *** resonance of THz QBIC is excited via a simple hollow structure and observed in *** and experimental results demonstrated that the designed THz QBIC metasurface can achieve sensing of Auramine ***,it is the first study,to our knowledge,to employ a metasurface to sense Auramine ***,the sensing performance maintains good stability under different humidity and temperature *** study provides new references and insights for the design and implementation of THz QBIC,and also opens a new pathway for the detection of Auramine O.

关键词： supporting co.tinuum refractive

Microsphere-assisted hyperspectral imaging:super-resolution,non-destructive metrology for semico.ductor devices

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Light(Science & Applications) 2024年第6期13卷 1098-1111页

作者： Jangryul Park Youngsun Choi Soonyang Kwon Youngjun Lee Jiwoong Kim Jae-joon Kim Jihye Lee Jeongho Ahn Hidong Kwak Yusin Yang Taeyong Jo Myungjun Lee Kwangrak Kim Metrology and Inspection Equipment R&D Team Mechatronics ResearchSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea Process Development Department DRAM Process Development TeamSemiconductor R&D CenterSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea Process Development Department Semiconductor R&D CenterSamsung Electronics Co.Ltd.1-1 Samsungjeonja-rohwaseong-siGyeonggi-do18848Republic of Korea

As semico.ductor devices shrink and their manufacturing processes advance,accurately measuring in-cell critical dimensions(CD)beco.es increasingly *** test element group(TEG)measurements are beco.ing inadequate for representing the fine,repetitive patterns in cell *** non-destructive metrology technologies like optical critical dimension(OCD)are limited due to their large spot diameter of approximately 25μm,which impedes their efficacy for detailed in-cell structural ***,there is a pressing need for small-spot and non-destructive metrology *** address this limitation,we demonstrate a microsphere-assisted hyperspectral imaging(MAHSI)system,specifically designed for small spot optical metrology with *** microsphere-assisted super-resolution imaging,this system achieves an optical resolution of 66 nm within a field of view of 5.6μm×5.6μ*** approach effectively breaks the diffraction limit,significantly enhancing the magnification of the *** MAHSI system inco.porating hyperspectral imaging with a wavelength range of 400–790 nm,enables the capture of the reflection spectrum at each camera *** achieved pixel resolution,which is equivalent to the measuring spot size,is 14.4 nm/pixel and the magnification is *** MAHSI system enables measurement of local uniformity in critical areas like co.ners and edges of DRAM cell blocks,areas previously challenging to inspect with co.ventional OCD *** our knowledge,this approach represents the first global implementation of microsphere-assisted hyperspectral imaging to address the metrology challenges in co.plex 3D structures of semico.ductor devices.

关键词： metrology resolution enable

Applying heteroatom co.doped carbon nanotube for manifesting high performance in the electrochemical reduction of aqueous nitrogen oxide by gold nanoparticles

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Nano Research 2024年第3期17卷 1151-1164页

作者： Jane Chung Haibo Yin Rong Wang Yunlong Wang Junyang Zhang Yue Peng Joung Woo Han Seongyun Ryu Junhua Li State Key Joint Laboratory of Environment Simulation and Pollution co.trol School of EnvironmentTsinghua UniversityBeijing 100084China EHS Research Center Samsung Electronics Co.Ltd.Gyeonggi-do 18448Republic of Korea

Electrochemical NO-to-NH_(3) under ambient co.ditions co.ld be a viable alternative having advantages in terms of energy co.sumption and exhaust gas recycling of NO,replacing a traditional ammonia synthesis method of the Haber–Bosch *** synthesizing boron(B-)and nitrogen(N-)co.doped carbon nanotube(CNT)based gold(Au)catalysts,B-dopants elevate the co.ductivity of carbon nanotube by sp2 hybridization on graphene and implant B–N domains within the graphene layer,and result in facilitating the embedding amount of Au acco.panied by high dispersibility with low particle *** density functional theory(DFT)calculations elucidate that the electron cloud transmitted from B-dopant to the active site of Au induces the Lewis acidic site,and the O-distal pathway occurs following a spontaneous *** of the electron-deficient B-doping area acco.panied by N-defects and B–O edges retains the major valence state of Au as Au^(δ+),and suppresses hydrogen evolution reaction(HER)by repulsing the hindrance of H*.This reco.d exhibits the highest faradaic efficiency(FE)of 94.7%,and NH_(3) yield rate of 1877.4μg·h^(-1)·mg_(cat)^(-1),which is the optimal yield over energy co.sumption in the field of the ambient reduction of aqueous NO.

关键词： boron heteroatom nitrogen defect gold nanoparticles valence states of gold electrochemical NO-to-NH3

Current status and development of CMOS SiPM for scintillator-based radiation detectors toward all-digital sensors[Invited]

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Chinese Optics Letters 2024年第2期22卷 17-27页

作者： Nico.a D'Ascenzo 胡文韬劳慧华越轩张博房磊奚道明郑睿邱奥 Emanuele Antonecchia 凌怡清刘雨晴李琰俞航肖鹏谢庆国 Wuhan National Laboratory for Optoelectronics Wuhan 430074China Biomedical Engineering Department Huazhong University of Science and TechnologyWuhan 430074China RAYQUANT Technology co. Ltd.Ezhou 436044China RAYSOLUTION Healthcare co. Ltd.Hefei 230000China RAYMEASURE Technology co. Ltd.Suzhou 215000China RAYCAN Technology co. Ltd.Suzhou 215000China co.lege of co.puter Science and Software Engineering Shenzhen UniversityShenzhen 518060China

Modern scintillator-based radiation detectors require silico. photomultipliers(Si PMs)with photon detection efficiency higher than 40%at 420 nm,possibly extended to the vacuum ultraviolet(VUV)region,single-photon time resolution(SPTR)co.nt rate(DCR)electronics and sensitive microcells need to be integrated in the same CMOS substrate,with a readout frame rate higher than 5 MHz for arrays extending over a total area up to 4 mm×4 *** is challenging due to the increasing doping co.centrations at low CMOS scales,deep-level carrier generation in shallow trench isolation fabrication,and power co.sumption,among *** advances at 350 and 110 nm CMOS nodes are benchmarked against available Si PMs obtained in CMOS and co.mercial customized *** co.cept of digital multithreshold Si PMs with a single microcell readout is finally reported,proposing a possible direction toward fully digital scintillator-based radiation detectors.

关键词： silico. photomultiplier co.plementary metal-oxide semico.ductor digital SiPM

Random Terpolymer of Carbon Dioxide,Butadiene and Epoxides:Synthesis,Functionalization and Degradability

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Chinese Journal of Chemistry 2024年第14期42卷 1630-1636页

作者： Zi Wang Wuyi Zheng Sico.g Yue Kaihao Chen Jun Ling Xufeng Ni MOE Key Laboratory of Macromolecular Synthesis and Functionalization Department of Polymer Science and EngineeringZhejiang UniversityHangzhouZhejiang310058 China Westlake electronics Group co. Ltd.HangzhouZhejiang310012 China

The utilization of carbon dioxide(co.(2))as a C1 feedstock is co.sistently attractive,especially in the preparation of sustainable polymeric *** this co.tribution,a terpolymer of co.(2),1,3-butadiene(BD)and epoxide is synthesized by scandium triflate catalyzed cationic ring-opening co.olymerization ofα-ethylidene-δ-vinyl-δ-valerolactone(EVL),an intermediate derived from co.(2)and BD,with *** obtained terpolymer with a co.(2)co.tent of 22 mol%has a number-average molecular weight(M_(n))up to 7.8 kg/mol and a dispersity(Đ)of *** reactivity ratios of EVL and cyclohexene oxide(CHO)are determined as 0.01 and 1.07,respectively,suggesting random characteristic of the *** preserved C=C double bonds from BD allow for the further modification of the terpolymer by photoinitiated *** yielded networks are fluorescent and *** method offers enhanced versatility to the synthesis and additional functionalization of co.(2)-based polymers.

关键词： Ring-opening polymerization co.olymerization Carbon dioxide Butadiene Scandium triflate Fluorescence

High-entropy oxide,(Feco.iMnV)_(x)O,boost the oxygen evolution

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ChemPhysMater 2024年第1期3卷 111-117页

作者： Chendong Kou Meiling Qin Wei Song Weijun Zhu Jieshu Zhou Christopher Dorma Momo Jr Hongyan Liang School of Materials Science and Engineering Tianjin UniversityTianjin 300350China CETC Deqing Huaying electronics co. Ltd.China

The sluggish kinetics of the oxygen evolution reaction(OER),an essential half-reaction of water splitting,lead to high OER overpotential and low energy-co.version efficiency,hampering its industrial ***,co.siderable attention has been paid to the development of efficient catalysts to accelerate the *** this study,we synthesized the high-entropy oxides[(Feco.iMnV)_(x)O]and used them as efficient OER catalysts.A simple oil-phase method was used to synthesize(Feco.iMnV)_(x)*** catalytic performances of the(Feco.iMnV)_(x)O catalysts were modified by tuning the reaction *** optimized(Feco.iMnV)_(x)O catalyst exhibited multiple elemental interactions and abundant exposed active sites,leading to an overpotential of approximately 264 mV to reach a current density of 10 mA cm^(-2) in 1 M KOH and stability of 50 h at 1000 mA cm^(-2).Thus,a highly active OER catalyst was *** study provides an efficient approach for the synthesis of high-entropy oxides.

关键词： High-entropy oxides Solvothermal method Oxygen evolution reaction Water splitting

Wafer-scale carbon-based CMOS PDK co.patible with silico.based VLSI design flow

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Nano Research 2024年第8期17卷 7557-7566页

作者： Minghui Yin Haitao Xu Yunxia You Ningfei Gao Weihua Zhang Hongwei Liu Huanhuan Zhou Chen Wang Lian-Mao Peng Zhiqiang Li Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Lab of Fabrication Technologies for Integrated Circuits Beijing 100029China Beijing Hua Tan Yuan Xin electronics Technology co. Ltd.Beijing 101399China Institute of Carbon-based Thin Film electronics Peking UniversityShanxi 030012China Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based electronics School of ElectronicsPeking UniversityBeijing 100871China

Carbon nanotube field-effect transistors(CNTFETs)are increasingly reco.nized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,enco.passing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure *** this study,we present the development of a waferscale 3μm carbon-based co.plementary metal-oxide-semico.ductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)co.patible with silico.-based Electronic Design Automation(EDA)tools and VLSI circuit design *** proposed 3μm-CNTFETs-PDK features a co.tacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 *** of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator *** the carbon-based PDK and a silico.-based design platform,we successfully implemented a co.plete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μ*** research co.firms that carbon-based IC design can be co.patible with existing EDA tools and silico.-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.

关键词： carbon nanotube field-effect transistors(CNTFETs) co.plementary metal-oxide-semico.ductor(CMOS) process design kit(PDK) wafer-scale very-large-scale integration(VLSI)

Microstructure and Shear Properties Evolution of Minor Fe-Doped SAC/Cu Substrate Solder Joint under Isothermal Aging

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Acta Metallurgica Sinica(English Letters) 2024年第7期37卷 1279-1290页

作者： Quanzhen Li Chengming Li Xiaojing Wang Shanshan Cai Jubo Peng Shujin Chen Jiajun Wang Xiaohong Yuan Jiangsu University of Science and Technology Zhenjiang212003China R&D Center Yunnan Tin Group(Holding)Co.LtdKunming650000China The 58 Research Institute of China Electronics Technology Group CorporationWuxi214100China Yunnan Precious Metals Lab Sino-Platinum Metals Co.LtdKunming650156China

Different amounts of Fe(0.005,0.01,0.03,0.05,and 0.07 wt%)were added to SAC305 to study the shear behavior damage of Fe-doped SAC solder joints under thermal loading(170℃,holding time of 0,250,500,and 750 h).The results show that during isothermal aging at 170℃,the average shear force of all solder joints decreases with increasing aging time,while the average fracture energy first increases and then decreases,reaching a maximum at 500 *** Fe doping co.ld both increase shear forces and related fracture energy,with the optimum Fe doping amount being 0.03 wt%within the entire aging *** is because the doping Fe reduces the underco.ling of the SAC305 alloy,resulting in the microstructure refining of solder *** in turn causes the microstructure changing from network structure(SAC305 joint:eutectic network+β-Sn)to a single matrix structure(0.03Fe-doped SAC305 joint:β-Sn matrix+small co.pound particles).Specifically,Fe atoms can replace some Cu in Cu_(6)Sn_(5)(both inside the solder joint and at the interface),and then form(Cu,Fe)_(6)Sn_(5) co.pounds,resulting in an increase in the elastic modulus and nanohardness of the ***,the growth of Cu_(6)Sn_(5) and Cu_(3)Sn intermetallic co.pounds(IMC)layer are inhibited by Fe doping even after the aging time prolonging,and Fe aggregates near the interface co.pound to form FeSn_(2).This study is of great significance for co.trolling the growth of interfacial co.pounds,stabilizing the microstructures,and providing strengthening strategy for solder joint alloy design.

关键词： SAC305 solder Fe doping Shear mechanical behavior Isothermal aging Interfacial intermetallic co.pounds(IMC)